Effect of interfacial interactions on the initial growth of Cu on clean SiO2 and 3-mercaptopropyltrimethoxysilane-modified SiO2 substrates

Minghui Hu*, Suguru Noda, Yoshiko Tsuji, Tatsuya Okubo, Yukio Yamaguchi, Hiroshi Komiyama

*この研究の対応する著者

研究成果: Article査読

45 被引用数 (Scopus)

抄録

The effect of interfacial interactions on the initial growth of Cu on clean SiO2 and MPTMS-modified SiO2 substrates by sputter deposition was studied using TEM, EDS, and XPS. The number density increased while the interparticle distance decreased, indicating that Cu has a lower mobility on MPTMS islands on MPTMS-modified SiO2 substrates than on clean SiO2 substrates. This difference was attributed to the enhanced interfacial interactions between Cu and S on MPTMS islands on MPTMS-modified SiO2 substrates via the formation of Cu-S bonds, compared with the relatively weak interfacial interactions between Cu and Si or O on clean SiO2 substrates.

本文言語English
ページ(範囲)589-596
ページ数8
ジャーナルJournal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films
20
3
DOI
出版ステータスPublished - 2002 5
外部発表はい

ASJC Scopus subject areas

  • 凝縮系物理学
  • 表面および界面
  • 表面、皮膜および薄膜

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