The effect of interfacial interactions on the initial growth of Cu on clean SiO2 and MPTMS-modified SiO2 substrates by sputter deposition was studied using TEM, EDS, and XPS. The number density increased while the interparticle distance decreased, indicating that Cu has a lower mobility on MPTMS islands on MPTMS-modified SiO2 substrates than on clean SiO2 substrates. This difference was attributed to the enhanced interfacial interactions between Cu and S on MPTMS islands on MPTMS-modified SiO2 substrates via the formation of Cu-S bonds, compared with the relatively weak interfacial interactions between Cu and Si or O on clean SiO2 substrates.
|ジャーナル||Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films|
|出版ステータス||Published - 2002 5|
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