Effect of intervalence-band interaction on relaxation time and transport coefficients for holes in non-polar semiconductors

K. Takeda*, K. Sakui, A. Taguchi, M. Sakata

*この研究の対応する著者

研究成果: Article査読

7 被引用数 (Scopus)

抄録

Considering the effects of three subbands (heavy, light and split-off hole) and the interaction between them, the authors investigated the relaxation time and the transport coefficients for holes which occupy the warped and non-parabolic valence band of non-polar semiconductors (silicon, germanium and diamond). They considered several scattering mechanisms due to lattice scattering including the non-polar optical phonon scattering and impurity scattering due to ionised and neutral centres. The calculated transport coefficients show good agreement with the experimental values if the above two effects are considered.

本文言語English
論文番号018
ページ(範囲)729-745
ページ数17
ジャーナルJournal of Physics C: Solid State Physics
16
4
DOI
出版ステータスPublished - 1983
外部発表はい

ASJC Scopus subject areas

  • 凝縮系物理学
  • 工学(全般)
  • 物理学および天文学(全般)

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