TY - JOUR
T1 - Effect of intervalence-band interaction on relaxation time and transport coefficients for holes in non-polar semiconductors
AU - Takeda, K.
AU - Sakui, K.
AU - Taguchi, A.
AU - Sakata, M.
PY - 1983
Y1 - 1983
N2 - Considering the effects of three subbands (heavy, light and split-off hole) and the interaction between them, the authors investigated the relaxation time and the transport coefficients for holes which occupy the warped and non-parabolic valence band of non-polar semiconductors (silicon, germanium and diamond). They considered several scattering mechanisms due to lattice scattering including the non-polar optical phonon scattering and impurity scattering due to ionised and neutral centres. The calculated transport coefficients show good agreement with the experimental values if the above two effects are considered.
AB - Considering the effects of three subbands (heavy, light and split-off hole) and the interaction between them, the authors investigated the relaxation time and the transport coefficients for holes which occupy the warped and non-parabolic valence band of non-polar semiconductors (silicon, germanium and diamond). They considered several scattering mechanisms due to lattice scattering including the non-polar optical phonon scattering and impurity scattering due to ionised and neutral centres. The calculated transport coefficients show good agreement with the experimental values if the above two effects are considered.
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U2 - 10.1088/0022-3719/16/4/018
DO - 10.1088/0022-3719/16/4/018
M3 - Article
AN - SCOPUS:0040079419
VL - 16
SP - 729
EP - 745
JO - Journal of Physics Condensed Matter
JF - Journal of Physics Condensed Matter
SN - 0953-8984
IS - 4
M1 - 018
ER -