Effect of intervalence-band interaction on relaxation time and transport coefficients for holes in non-polar semiconductors

K. Takeda, K. Sakui, A. Taguchi, M. Sakata

研究成果: Article

7 引用 (Scopus)

抜粋

Considering the effects of three subbands (heavy, light and split-off hole) and the interaction between them, the authors investigated the relaxation time and the transport coefficients for holes which occupy the warped and non-parabolic valence band of non-polar semiconductors (silicon, germanium and diamond). They considered several scattering mechanisms due to lattice scattering including the non-polar optical phonon scattering and impurity scattering due to ionised and neutral centres. The calculated transport coefficients show good agreement with the experimental values if the above two effects are considered.

元の言語English
記事番号018
ページ(範囲)729-745
ページ数17
ジャーナルJournal of Physics C: Solid State Physics
16
発行部数4
DOI
出版物ステータスPublished - 1983 12 1
外部発表Yes

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Engineering(all)
  • Physics and Astronomy(all)

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