Effect of iodide ions on the hydrogen-terminated and partially oxygen-terminated diamond surface

Hirofumi Kanazawa; Kwang Soup Song; Toshikatsu Sakai; Yusuke Nakamura; Hitoshi Umezawa; Minoru Tachiki; Hiroshi Kawarada

doi:10.1016/S0925-9635(03)00035-9

Effect of iodide ions on the hydrogen-terminated and partially oxygen-terminated diamond surface

Hirofumi Kanazawa^*, Kwang Soup Song, Toshikatsu Sakai, Yusuke Nakamura, Hitoshi Umezawa, Minoru Tachiki, Hiroshi Kawarada

^*この研究の対応する著者

基幹理工学部

研究成果 › 査読

34 被引用数 (Scopus)

抄録

The effect of I^- ions on the threshold voltages of the electrolyte-solution-gate diamond field-effect transistors (SGFETs) in KI solution is investigated. The threshold voltages of hydrogen-terminated (H-terminated) diamond SGFETs shift in the KI concentration range of 10^-6-10^-1 M in aqueous solutions. The sensitivity of the H-terminated diamond surface to I^- ions is higher than that to Cl^- or Br^- ions. However, the sensitivity to I^- ions of the partially oxygen-terminated (O-terminated) diamond surface drastically decreases with ozone treatment. The mechanisms of these phenomena can be explained by the surface charge and the adsorbability of I^- ions on the H-terminated and O-terminated diamond surfaces.

本文言語	English
ページ（範囲）	618-622
ページ数	5
ジャーナル	Diamond and Related Materials
巻	12
号	3-7
DOI	https://doi.org/10.1016/S0925-9635(03)00035-9
出版ステータス	Published - 2003 3月

ASJC Scopus subject areas

電子材料、光学材料、および磁性材料
化学 (全般)
機械工学
材料化学
電子工学および電気工学

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10.1016/S0925-9635(03)00035-9

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@article{b81f25fd865841b6bd981b6e1fb98a23,

title = "Effect of iodide ions on the hydrogen-terminated and partially oxygen-terminated diamond surface",

abstract = "The effect of I- ions on the threshold voltages of the electrolyte-solution-gate diamond field-effect transistors (SGFETs) in KI solution is investigated. The threshold voltages of hydrogen-terminated (H-terminated) diamond SGFETs shift in the KI concentration range of 10-6-10-1 M in aqueous solutions. The sensitivity of the H-terminated diamond surface to I- ions is higher than that to Cl- or Br- ions. However, the sensitivity to I- ions of the partially oxygen-terminated (O-terminated) diamond surface drastically decreases with ozone treatment. The mechanisms of these phenomena can be explained by the surface charge and the adsorbability of I- ions on the H-terminated and O-terminated diamond surfaces.",

keywords = "Hydrogen-terminated diamond, Iodide ions, Ion sensitive FET, Oxygen-terminated diamond",

author = "Hirofumi Kanazawa and Song, {Kwang Soup} and Toshikatsu Sakai and Yusuke Nakamura and Hitoshi Umezawa and Minoru Tachiki and Hiroshi Kawarada",

note = "Funding Information: This work is supported in part by a Grant-in-Aid for Center of Excellence (COE) Research from the Ministry of Education, Culture, Sports, Science and Technology. This work is also supported in part by the Advanced Research Institute for Science and Engineering, Waseda University.",

year = "2003",

month = mar,

doi = "10.1016/S0925-9635(03)00035-9",

language = "English",

volume = "12",

pages = "618--622",

journal = "Diamond and Related Materials",

issn = "0925-9635",

publisher = "Elsevier BV",

number = "3-7",

}

TY - JOUR

T1 - Effect of iodide ions on the hydrogen-terminated and partially oxygen-terminated diamond surface

AU - Kanazawa, Hirofumi

AU - Song, Kwang Soup

AU - Sakai, Toshikatsu

AU - Nakamura, Yusuke

AU - Umezawa, Hitoshi

AU - Tachiki, Minoru

AU - Kawarada, Hiroshi

N1 - Funding Information: This work is supported in part by a Grant-in-Aid for Center of Excellence (COE) Research from the Ministry of Education, Culture, Sports, Science and Technology. This work is also supported in part by the Advanced Research Institute for Science and Engineering, Waseda University.

PY - 2003/3

Y1 - 2003/3

N2 - The effect of I- ions on the threshold voltages of the electrolyte-solution-gate diamond field-effect transistors (SGFETs) in KI solution is investigated. The threshold voltages of hydrogen-terminated (H-terminated) diamond SGFETs shift in the KI concentration range of 10-6-10-1 M in aqueous solutions. The sensitivity of the H-terminated diamond surface to I- ions is higher than that to Cl- or Br- ions. However, the sensitivity to I- ions of the partially oxygen-terminated (O-terminated) diamond surface drastically decreases with ozone treatment. The mechanisms of these phenomena can be explained by the surface charge and the adsorbability of I- ions on the H-terminated and O-terminated diamond surfaces.

AB - The effect of I- ions on the threshold voltages of the electrolyte-solution-gate diamond field-effect transistors (SGFETs) in KI solution is investigated. The threshold voltages of hydrogen-terminated (H-terminated) diamond SGFETs shift in the KI concentration range of 10-6-10-1 M in aqueous solutions. The sensitivity of the H-terminated diamond surface to I- ions is higher than that to Cl- or Br- ions. However, the sensitivity to I- ions of the partially oxygen-terminated (O-terminated) diamond surface drastically decreases with ozone treatment. The mechanisms of these phenomena can be explained by the surface charge and the adsorbability of I- ions on the H-terminated and O-terminated diamond surfaces.

KW - Hydrogen-terminated diamond

KW - Iodide ions

KW - Ion sensitive FET

KW - Oxygen-terminated diamond

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UR - http://www.scopus.com/inward/citedby.url?scp=0038576361&partnerID=8YFLogxK

U2 - 10.1016/S0925-9635(03)00035-9

DO - 10.1016/S0925-9635(03)00035-9

M3 - Article

AN - SCOPUS:0038576361

SN - 0925-9635

VL - 12

SP - 618

EP - 622

JO - Diamond and Related Materials

JF - Diamond and Related Materials

IS - 3-7

ER -

Effect of iodide ions on the hydrogen-terminated and partially oxygen-terminated diamond surface

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