Effect of iodide ions on the hydrogen-terminated and partially oxygen-terminated diamond surface

Hirofumi Kanazawa*, Kwang Soup Song, Toshikatsu Sakai, Yusuke Nakamura, Hitoshi Umezawa, Minoru Tachiki, Hiroshi Kawarada

*この研究の対応する著者

研究成果: Article査読

34 被引用数 (Scopus)

抄録

The effect of I- ions on the threshold voltages of the electrolyte-solution-gate diamond field-effect transistors (SGFETs) in KI solution is investigated. The threshold voltages of hydrogen-terminated (H-terminated) diamond SGFETs shift in the KI concentration range of 10-6-10-1 M in aqueous solutions. The sensitivity of the H-terminated diamond surface to I- ions is higher than that to Cl- or Br- ions. However, the sensitivity to I- ions of the partially oxygen-terminated (O-terminated) diamond surface drastically decreases with ozone treatment. The mechanisms of these phenomena can be explained by the surface charge and the adsorbability of I- ions on the H-terminated and O-terminated diamond surfaces.

本文言語English
ページ(範囲)618-622
ページ数5
ジャーナルDiamond and Related Materials
12
3-7
DOI
出版ステータスPublished - 2003 3月

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 化学 (全般)
  • 機械工学
  • 材料化学
  • 電子工学および電気工学

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