抄録
(112̄0) oriented ZnO films where the c-axis is parallel to a substrate are good candidates for acoustic shear wave devices and sensors. Although ZnO film has tendency to develop c-axis normal (0001) orientation, unusual (112̄0) orientation appears in the situation that energetic oxygen ions generated from a target surface bombard the substrate during film growth in a reactive sputtering. The flux and the energy of these ions depend on the transition between the metal mode and the oxide mode on the Zn metal target surface. Here, the effect of the target surface condition on the development of unusual (112̄0) orientation is investigated. The higher crystalline (112̄0) orientation appeared in the oxide mode, probably because a large amount of energetic oxygen ions generated by the oxidized part of the Zn target.
| 元の言語 | English |
|---|---|
| ページ（範囲） | 22-24 |
| ページ数 | 3 |
| ジャーナル | Journal of Crystal Growth |
| 巻 | 363 |
| DOI | |
| 出版物ステータス | Published - 2013 |
| 外部発表 | Yes |
Fingerprint
ASJC Scopus subject areas
- Condensed Matter Physics
- Materials Chemistry
- Inorganic Chemistry
これを引用
Effect of metal mode and oxide mode on unusual c-axis parallel oriented ZnO film growth on Al/glass substrate in a reactive magnetron sputtering of Zn target. / Takayanagi, Shinji; Yanagitani, Takahiko; Matsukawa, Mami.
：: Journal of Crystal Growth, 巻 363, 2013, p. 22-24.研究成果: Article
}
TY - JOUR
T1 - Effect of metal mode and oxide mode on unusual c-axis parallel oriented ZnO film growth on Al/glass substrate in a reactive magnetron sputtering of Zn target
AU - Takayanagi, Shinji
AU - Yanagitani, Takahiko
AU - Matsukawa, Mami
PY - 2013
Y1 - 2013
N2 - (112̄0) oriented ZnO films where the c-axis is parallel to a substrate are good candidates for acoustic shear wave devices and sensors. Although ZnO film has tendency to develop c-axis normal (0001) orientation, unusual (112̄0) orientation appears in the situation that energetic oxygen ions generated from a target surface bombard the substrate during film growth in a reactive sputtering. The flux and the energy of these ions depend on the transition between the metal mode and the oxide mode on the Zn metal target surface. Here, the effect of the target surface condition on the development of unusual (112̄0) orientation is investigated. The higher crystalline (112̄0) orientation appeared in the oxide mode, probably because a large amount of energetic oxygen ions generated by the oxidized part of the Zn target.
AB - (112̄0) oriented ZnO films where the c-axis is parallel to a substrate are good candidates for acoustic shear wave devices and sensors. Although ZnO film has tendency to develop c-axis normal (0001) orientation, unusual (112̄0) orientation appears in the situation that energetic oxygen ions generated from a target surface bombard the substrate during film growth in a reactive sputtering. The flux and the energy of these ions depend on the transition between the metal mode and the oxide mode on the Zn metal target surface. Here, the effect of the target surface condition on the development of unusual (112̄0) orientation is investigated. The higher crystalline (112̄0) orientation appeared in the oxide mode, probably because a large amount of energetic oxygen ions generated by the oxidized part of the Zn target.
KW - A1. X-ray diffraction
KW - A3. Physical vapor deposition processes
KW - B1. Zinc compounds
KW - B2. Piezoelectric materials
UR - http://www.scopus.com/inward/record.url?scp=84888356137&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84888356137&partnerID=8YFLogxK
U2 - 10.1016/j.jcrysgro.2012.09.016
DO - 10.1016/j.jcrysgro.2012.09.016
M3 - Article
AN - SCOPUS:84888356137
VL - 363
SP - 22
EP - 24
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
ER -