Effect of multiple-step annealing on the formation of semiconducting β-FeSi2 and metallic α-Fe2Si5 on Si (100) by ion beam synthesis

Hiroshi Katsumata, Yunosuke Makita*, Naoto Kobayashi, Hajime Shibata, Masataka Hasegawa, Shin Ichiro Uekusa


研究成果: Article査読

32 被引用数 (Scopus)


Polycrystalline semiconducting β-FeSi2 layers on Si (100) have been formed by ion beam synthesis. Results from two different annealing processes, either two-step (2SA) annealing up to 900°C or three-step annealing (3SA) up to 1100°C, are discussed. β-FeSi2 grown by 3SA has shown a typical direct band-gap energy (Edir g) of 0.88 eV and a high localized defect density (N0) of 1.0 × 1018 cm-3, the latter being due to crystallographic mismatches or relevant defects at grain boundaries introduced during the transformation process from β to α. On the contrary, β-FeSi2 grown by 2 SA has shown a lower Edir g of 0.80 eV and a smaller N0 of 1.7 × 1017 cm-3, the former arising from a deviation of the stoichiometric composition to the Si-rich side. Broad PL bands near 0.8 eV have been observed at 2 K from both 2SA and 3SA samples, and we assign these PL bands to optical radiative transitions intrinsic to β-FeSi2.

ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
5 A
出版ステータスPublished - 1997 5

ASJC Scopus subject areas

  • 物理学および天文学(その他)
  • 工学(全般)


「Effect of multiple-step annealing on the formation of semiconducting β-FeSi<sub>2</sub> and metallic α-Fe<sub>2</sub>Si<sub>5</sub> on Si (100) by ion beam synthesis」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。