Effect of NiAl underlayer and spacer on magnetoresistance of current-perpendicular-to-plane spin valves using Co2Mn(Ga 0.5Sn0.5) Heusler alloy

N. Hase, T. M. Nakatani, S. Kasai, Y. K. Takahashi, T. Furubayashi, K. Hono*

*この研究の対応する著者

研究成果: Article査読

13 被引用数 (Scopus)

抄録

We investigated the effect of a NiAl underlayer and spacer on magnetoresistive (MR) properties in current-perpendicular-to-plane spin valves (CPP-SVs) using Co2Mn(Ga0.5Sn0.5) (CMGS) Heusler alloy ferromagnetic layers. The usage of a NiAl underlayer allowed a high temperature annealing for the L21 ordering of the bottom CMGS layer, giving rise to a MR ratio of 10.2% at room temperature. We found that the usage of a NiAl spacer layer also improved the tolerance of the multilayer structure against thermal delamination, which allowed annealing to induce the L21 structure in both the bottom and top CMGS layers. However, the short spin diffusion length of NiAl resulted in a lower MR ratio compared to that obtained using a Ag spacer. Transmission electron microscopy of the multilayer structure of CPP-SVs showed that the atomically flat layered structure was maintained after the annealing.

本文言語English
ページ(範囲)440-444
ページ数5
ジャーナルJournal of Magnetism and Magnetic Materials
324
4
DOI
出版ステータスPublished - 2012 2
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学

フィンガープリント

「Effect of NiAl underlayer and spacer on magnetoresistance of current-perpendicular-to-plane spin valves using Co<sub>2</sub>Mn(Ga <sub>0.5</sub>Sn<sub>0.5</sub>) Heusler alloy」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

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