The effect of oxidation of silicon surface on chemical deposition of nickel was investigated in aqueous basic baths containing Ni2+. On H-terminated Si(100), Ni was deposited obviously but partially. On oxidized Si(100), Ni was deposited on the whole surface with a higher rate than on H-Si (100). The deposits were examined by scanning electron microscopy (SEM) and Auger electron spectroscopy (AES). Selective nickel deposition was performed on oxidized Si(100) patterned with a layer of plasma-CVD SiO2. Ni dots with diameters about 1 μm were formed by dipping the patterned Si(100) wafers first into a Ni bath containing no reducing agent for nuclei formation, and then into a Ni bath with reducing agent for growing particles.
|出版ステータス||Published - 1999 6月 1|
|イベント||Proceedings of the 1999 2nd International Symposium on Electrochemical Microsystems Technologies - Electrochemical Applications of Microtechnology - Grevenbroich, Ger|
継続期間: 1999 9月 9 → 1999 9月 11
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