Effect of oxidized silicon surface on chemical deposition of nickel on n-type silicon wafer

Nao Takano, Naohiro Hosoda, Taro Yamada, Tetsuya Osaka

研究成果: Conference article査読

23 被引用数 (Scopus)

抄録

The effect of oxidation of silicon surface on chemical deposition of nickel was investigated in aqueous basic baths containing Ni2+. On H-terminated Si(100), Ni was deposited obviously but partially. On oxidized Si(100), Ni was deposited on the whole surface with a higher rate than on H-Si (100). The deposits were examined by scanning electron microscopy (SEM) and Auger electron spectroscopy (AES). Selective nickel deposition was performed on oxidized Si(100) patterned with a layer of plasma-CVD SiO2. Ni dots with diameters about 1 μm were formed by dipping the patterned Si(100) wafers first into a Ni bath containing no reducing agent for nuclei formation, and then into a Ni bath with reducing agent for growing particles.

本文言語English
ページ(範囲)3743-3749
ページ数7
ジャーナルElectrochimica Acta
44
21
DOI
出版ステータスPublished - 1999 6 1
イベントProceedings of the 1999 2nd International Symposium on Electrochemical Microsystems Technologies - Electrochemical Applications of Microtechnology - Grevenbroich, Ger
継続期間: 1999 9 91999 9 11

ASJC Scopus subject areas

  • 化学工学(全般)
  • 電気化学

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