Effect of ozone annealing on the charge trapping property of Ta2O5-Si3N4-p-Si capacitor grown by low-pressure chemical vapor deposition

Hiromitsu Kato, Kwang Soo Seol, Makoto Fujimaki, Takehiko Toyoda, Yoshimichi Ohki, Makoto Takiyama

研究成果: Article査読

13 被引用数 (Scopus)

抄録

The effect of ozone annealing on the charge trapping property of Ta2O5/Si3N4/p-Si capacitors was examined by measuring high-frequency capacitance-voltage and thermally stimulated current characteristics. The results suggest that two types of electron traps exist in the Ta2O5 layer and that the ozone annealing efficiently eliminates them.

本文言語English
ページ(範囲)6791-6796
ページ数6
ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
38
12 A
出版ステータスPublished - 1999 12 1

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

フィンガープリント 「Effect of ozone annealing on the charge trapping property of Ta<sub>2</sub>O<sub>5</sub>-Si<sub>3</sub>N<sub>4</sub>-p-Si capacitor grown by low-pressure chemical vapor deposition」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

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