Effect of ozone annealing on the charge trapping property of Ta2O5-Si3N4-p-Si capacitor grown by low pressure chemical vapor deposition

H. Kato, K. S. Seol, T. Toyoda, Y. Ohki

研究成果: Paper査読

2 被引用数 (Scopus)

抄録

The effects of ozone annealing on the charge trapping property of TaO films grown on Si3N4 barrier layers by low pressure CVD are investigated. The ozone annealing eliminates electron traps existing throughout the Ta2O5 films but generates hole traps. This is maybe due to structural or stoichiometric change induced by the ozone annealing.

本文言語English
ページ131-134
ページ数4
出版ステータスPublished - 1998 12 1
イベントProceedings of the 1998 International Symposium on Electrical Insulating Materials - Toyohashi, Jpn
継続期間: 1998 9 271998 9 30

Other

OtherProceedings of the 1998 International Symposium on Electrical Insulating Materials
CityToyohashi, Jpn
Period98/9/2798/9/30

ASJC Scopus subject areas

  • Engineering(all)
  • Materials Science(all)

フィンガープリント 「Effect of ozone annealing on the charge trapping property of Ta<sub>2</sub>O<sub>5</sub>-Si<sub>3</sub>N<sub>4</sub>-p-Si capacitor grown by low pressure chemical vapor deposition」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

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