Effect of solution drift on crystalline morphology in the solution growth of off-axis 4H-SiC crystals

Takashi Kato*, Kazuhiko Kusunoki, Kazuaki Seki, Nobuhiro Okada, Kazuhito Kamei

*この研究の対応する著者

研究成果: Conference contribution

抄録

We investigated the effect of the solution flow on crystalline morphology in off-axis 4H-SiC solution growth. In particular, we focused on the relationship between the Si solution flow and step flow directions. In step parallel flow in which the solution drifted transversely to the step flow direction of the off-axis substrate, it was possible to attain a better surface morphology than when the solution drifted in the other direction. Furthermore, the surface morphology was found to be improved as the flow velocity increased. These improvements in morphological stability are presumed to be caused by the aligning of the solute concentration fluctuation along the steps.

本文言語English
ホスト出版物のタイトルSilicon Carbide and Related Materials 2015
出版社Trans Tech Publications Ltd
ページ65-68
ページ数4
858
ISBN(印刷版)9783035710427
DOI
出版ステータスPublished - 2016
イベント16th International Conference on Silicon Carbide and Related Materials, ICSCRM 2015 - Sicily, Italy
継続期間: 2015 10 42015 10 9

出版物シリーズ

名前Materials Science Forum
858
ISSN(印刷版)02555476

Other

Other16th International Conference on Silicon Carbide and Related Materials, ICSCRM 2015
国/地域Italy
CitySicily
Period15/10/415/10/9

ASJC Scopus subject areas

  • 材料科学(全般)
  • 凝縮系物理学
  • 機械工学
  • 材料力学

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