We investigated the effect of the solution flow on crystalline morphology in off-axis 4H-SiC solution growth. In particular, we focused on the relationship between the Si solution flow and step flow directions. In step parallel flow in which the solution drifted transversely to the step flow direction of the off-axis substrate, it was possible to attain a better surface morphology than when the solution drifted in the other direction. Furthermore, the surface morphology was found to be improved as the flow velocity increased. These improvements in morphological stability are presumed to be caused by the aligning of the solute concentration fluctuation along the steps.