Effect of strain variation on photoluminescence from InGaAs quantum dots in air-bridge structures

T. Nakaoka*, T. Kakitsuka, T. Saito, S. Kako, S. Ishida, M. Nishioka, Y. Yoshikuni, Y. Arakawa

*この研究の対応する著者

研究成果: Article査読

2 被引用数 (Scopus)

抄録

We have fabricated freestanding wire (air-bridge) structures with a bowed shape by introducing a strain layer to vary the strain around quantum dots. The photoluminescence peak energy shift following the shape change of the bridge can be observed for individual InGaAs quantum dots. We find systematic dependence of the peak shift on the dot position along the growth direction. The dependence of the peak shift is explained by strain distribution in the bridge. The strain distribution in the bridge as well as in the dot is calculated using a finite element method. Using the strain data, the electronic structures of the dots embedded in the bridge structures are calculated within the effective mass approximation. The calculated energy shifts agree well with the experimental ones.

本文言語English
ページ(範囲)289-292
ページ数4
ジャーナルPhysica Status Solidi (B) Basic Research
238
2
DOI
出版ステータスPublished - 2003 7 1
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学

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