GaAs//1// minus //xP//x crystals were grown by molecular-beam epitaxy with parametric variation of substrate temperature T//s (540-580 degree C) and of the ratio of beam intensity of P to that of As (2-11). The rate of decrease of composition ratio x with temperature, minus dx/dT//s, is 0. 003 degree C** minus **1 for all ratios of beam intensity. The sticking coefficient of P is found to vary inversely proportional to the substrate temperature in this temperature range. This fact indicates the possibility of writing two-dimensional patterns on the surface by a partial temperature rise.
ASJC Scopus subject areas