EFFECT OF SUBSTRATE TEMPERATURE ON COMPOSITION RATIO X IN MOLECULAR-BEAM-EPITAXIAL GaAs//1// minus //xP//x.

Shun ichi Gonda, Yuichi Matsushima

研究成果: Article

19 引用 (Scopus)

抄録

GaAs//1// minus //xP//x crystals were grown by molecular-beam epitaxy with parametric variation of substrate temperature T//s (540-580 degree C) and of the ratio of beam intensity of P to that of As (2-11). The rate of decrease of composition ratio x with temperature, minus dx/dT//s, is 0. 003 degree C** minus **1 for all ratios of beam intensity. The sticking coefficient of P is found to vary inversely proportional to the substrate temperature in this temperature range. This fact indicates the possibility of writing two-dimensional patterns on the surface by a partial temperature rise.

元の言語English
ページ(範囲)4198-4200
ページ数3
ジャーナルJournal of Applied Physics
47
発行部数9
DOI
出版物ステータスPublished - 1976 9
外部発表Yes

Fingerprint

molecular beams
temperature
molecular beam epitaxy
coefficients
crystals

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Physics and Astronomy (miscellaneous)

これを引用

EFFECT OF SUBSTRATE TEMPERATURE ON COMPOSITION RATIO X IN MOLECULAR-BEAM-EPITAXIAL GaAs//1// minus //xP//x. / Gonda, Shun ichi; Matsushima, Yuichi.

:: Journal of Applied Physics, 巻 47, 番号 9, 09.1976, p. 4198-4200.

研究成果: Article

@article{95afdbb652aa4db78220a5d22a32855c,
title = "EFFECT OF SUBSTRATE TEMPERATURE ON COMPOSITION RATIO X IN MOLECULAR-BEAM-EPITAXIAL GaAs//1// minus //xP//x.",
abstract = "GaAs//1// minus //xP//x crystals were grown by molecular-beam epitaxy with parametric variation of substrate temperature T//s (540-580 degree C) and of the ratio of beam intensity of P to that of As (2-11). The rate of decrease of composition ratio x with temperature, minus dx/dT//s, is 0. 003 degree C** minus **1 for all ratios of beam intensity. The sticking coefficient of P is found to vary inversely proportional to the substrate temperature in this temperature range. This fact indicates the possibility of writing two-dimensional patterns on the surface by a partial temperature rise.",
author = "Gonda, {Shun ichi} and Yuichi Matsushima",
year = "1976",
month = "9",
doi = "10.1063/1.323288",
language = "English",
volume = "47",
pages = "4198--4200",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "9",

}

TY - JOUR

T1 - EFFECT OF SUBSTRATE TEMPERATURE ON COMPOSITION RATIO X IN MOLECULAR-BEAM-EPITAXIAL GaAs//1// minus //xP//x.

AU - Gonda, Shun ichi

AU - Matsushima, Yuichi

PY - 1976/9

Y1 - 1976/9

N2 - GaAs//1// minus //xP//x crystals were grown by molecular-beam epitaxy with parametric variation of substrate temperature T//s (540-580 degree C) and of the ratio of beam intensity of P to that of As (2-11). The rate of decrease of composition ratio x with temperature, minus dx/dT//s, is 0. 003 degree C** minus **1 for all ratios of beam intensity. The sticking coefficient of P is found to vary inversely proportional to the substrate temperature in this temperature range. This fact indicates the possibility of writing two-dimensional patterns on the surface by a partial temperature rise.

AB - GaAs//1// minus //xP//x crystals were grown by molecular-beam epitaxy with parametric variation of substrate temperature T//s (540-580 degree C) and of the ratio of beam intensity of P to that of As (2-11). The rate of decrease of composition ratio x with temperature, minus dx/dT//s, is 0. 003 degree C** minus **1 for all ratios of beam intensity. The sticking coefficient of P is found to vary inversely proportional to the substrate temperature in this temperature range. This fact indicates the possibility of writing two-dimensional patterns on the surface by a partial temperature rise.

UR - http://www.scopus.com/inward/record.url?scp=0016992928&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0016992928&partnerID=8YFLogxK

U2 - 10.1063/1.323288

DO - 10.1063/1.323288

M3 - Article

AN - SCOPUS:0016992928

VL - 47

SP - 4198

EP - 4200

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 9

ER -