EFFECT OF SUBSTRATE TEMPERATURE ON COMPOSITION RATIO X IN MOLECULAR-BEAM-EPITAXIAL GaAs//1// minus //xP//x.

Shun ichi Gonda, Yuichi Matsushima

研究成果: Article査読

19 被引用数 (Scopus)

抄録

GaAs//1// minus //xP//x crystals were grown by molecular-beam epitaxy with parametric variation of substrate temperature T//s (540-580 degree C) and of the ratio of beam intensity of P to that of As (2-11). The rate of decrease of composition ratio x with temperature, minus dx/dT//s, is 0. 003 degree C** minus **1 for all ratios of beam intensity. The sticking coefficient of P is found to vary inversely proportional to the substrate temperature in this temperature range. This fact indicates the possibility of writing two-dimensional patterns on the surface by a partial temperature rise.

本文言語English
ページ(範囲)4198-4200
ページ数3
ジャーナルJournal of Applied Physics
47
9
DOI
出版ステータスPublished - 1976 9
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(全般)
  • 物理学および天文学(その他)

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