Effect of substrate temperature on crystal orientation and residual stress in radio frequency sputtered gallium-nitride films

Kazuya Kusaka*, Takao Hanabusa, Kikuo Tominaga, Noriyoshi Yamauchi

*この研究の対応する著者

研究成果: Article査読

10 被引用数 (Scopus)

抄録

The effect of substrate temperature on the crystal orientation and residual stresses of gallium-nitride (GaN) films obtained by sputtering was discussed. X-ray diffraction method was used for the study. The GaN films were deposited at various substrate temperatures and the gas pressure and input power were kept constant. The crystal sizes of the films deposited at high temperatures were found to be larger than those obtained at low substrate temperatures. All films except that deposited at 973K exhibited a compressive residual stress which was observed to be decreasing with increase in temperatures.

本文言語English
ページ(範囲)1587-1590
ページ数4
ジャーナルJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
22
4
DOI
出版ステータスPublished - 2004 7月 1
外部発表はい

ASJC Scopus subject areas

  • 凝縮系物理学
  • 表面および界面
  • 表面、皮膜および薄膜

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