Effect of Surface Charge Model in the Characterization of Two-dimensional Hydrogenated Nanocrystalline-diamond Metal Oxide Semiconductor Field Effect Transistor (MOSFET) with Device Simulation

Reem Alhasani, Taichi Yabe, Yutaro Iyama, Mohammed Alhasani, Quang N. Nguyen, Hiroshi Kawarada

研究成果: Conference contribution

抄録

Diamond is a valuable material with unique properties of nanocrystalline and is widely used in the fabrication of nano-electronic devices to develop new and promising power device applications. In general, the hydrogenated-(C-H) nano-diamond Metal Oxide Semiconductor Field Effect Transistor (MOSFET) depicts the normally-on status (depletion mode). In this paper, we investigate the interface charge effect on C-H diamond to confirm the normally-on operation, then show the characterization of surface charge effect on device operations, including normally-off with a controlled gate voltage and the nature charge of the power device. To study the corresponding effects, we simulate the two-dimensional (2D) C-H nano-diamond MOSFET under several surface charge models. These negatively charged sites or acceptors are scattering centers for carrier (holes) transport near the C-H surface. When FET operation can be realized without negatively charged sites, channel mobility is not limited by these sites and is enhanced by a factor of 3-4. The results confirm that the two-dimensional hole gas (2DHG) close to the surface indicates a p-type channel due to the dipole effect between hydrogenated diamond and the negative charge of Al2O3. The normally-off operation is achieved to realize a safety point for the power device. The evaluation results also show that the threshold voltage shifts to a negative value in a positive charge model, given that in principle, this state is not feasible without an oxidation layer or doping.

本文言語English
ホスト出版物のタイトル2021 IEEE 16th Nanotechnology Materials and Devices Conference, NMDC 2021
出版社Institute of Electrical and Electronics Engineers Inc.
ISBN(電子版)9781665418928
DOI
出版ステータスPublished - 2021
イベント16th IEEE Nanotechnology Materials and Devices Conference, NMDC 2021 - Vancouver, Canada
継続期間: 2021 12月 122021 12月 15

出版物シリーズ

名前2021 IEEE 16th Nanotechnology Materials and Devices Conference, NMDC 2021

Conference

Conference16th IEEE Nanotechnology Materials and Devices Conference, NMDC 2021
国/地域Canada
CityVancouver
Period21/12/1221/12/15

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 金属および合金
  • 器械工学
  • ハードウェアとアーキテクチャ
  • 電子工学および電気工学
  • 機械工学

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