Effect of the MgO substrate on the growth of GaN

R. Suzuki, A. Kawaharazuka, Y. Horikoshi

研究成果: Article査読

9 被引用数 (Scopus)

抄録

We investigate the effect of the MgO substrate on the growth of GaN by molecular beam epitaxy with radio frequency plasma source. MgO substrate is advantageous for its closer lattice constant to GaN. However, epitaxial GaN layer grown on MgO (1 1 1) substrate is often inclined about 2{ring operator} toward a particular a-axis of the GaN. This inclination is found to be caused by the domain structure of the MgO substrates. On the tilted domains of the substrate, the strain is effectively relaxed through the inclination. Another difficulty of MgO substrate is the diffusion of Mg atoms into the GaN layer. This Mg diffusion from the MgO substrate has successfully been suppressed by introducing the thin low-temperature grown AlN buffer layer. The AlN buffer also improves the crystalline quality of the GaN layer.

本文言語English
ページ(範囲)2021-2024
ページ数4
ジャーナルJournal of Crystal Growth
311
7
DOI
出版ステータスPublished - 2009 3 15

ASJC Scopus subject areas

  • 凝縮系物理学
  • 材料化学
  • 無機化学

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