EFFECT OF THE SUBTHRESHOLD CURRENT ON SCALED-DOWN MOS DYNAMIC RAM's.

Koichiro Mashiko, Michihiro Yamada, Yasuji Nagayama, Tsutomu Yoshihara, Takao Nakano

研究成果: Article査読

抄録

Data-output holding characteristics of MOS dynamic RAM's with 2. 5 mu m design rules are studied by employing the hidden-RAS-only-refresh mode. It is verified that the noise voltage caused by internal circuit operation increases the subthreshold current and that the clamp circuitry effectively decreases the subthreshold current.

本文言語English
ページ(範囲)429-431
ページ数3
ジャーナルIEEE Journal of Solid-State Circuits
SC-18
4
出版ステータスPublished - 1983 8
外部発表はい

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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