EFFECT OF THE SUBTHRESHOLD CURRENT ON SCALED-DOWN MOS DYNAMIC RAM's.

Koichiro Mashiko, Michihiro Yamada, Yasuji Nagayama, Tsutomu Yoshihara, Takao Nakano

研究成果: Article

抜粋

Data-output holding characteristics of MOS dynamic RAM's with 2. 5 mu m design rules are studied by employing the hidden-RAS-only-refresh mode. It is verified that the noise voltage caused by internal circuit operation increases the subthreshold current and that the clamp circuitry effectively decreases the subthreshold current.

元の言語English
ページ(範囲)429-431
ページ数3
ジャーナルIEEE Journal of Solid-State Circuits
SC-18
発行部数4
出版物ステータスPublished - 1983 8
外部発表Yes

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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  • これを引用

    Mashiko, K., Yamada, M., Nagayama, Y., Yoshihara, T., & Nakano, T. (1983). EFFECT OF THE SUBTHRESHOLD CURRENT ON SCALED-DOWN MOS DYNAMIC RAM's. IEEE Journal of Solid-State Circuits, SC-18(4), 429-431.