Data-output holding characteristics of MOS dynamic RAM's with 2. 5 mu m design rules are studied by employing the hidden-RAS-only-refresh mode. It is verified that the noise voltage caused by internal circuit operation increases the subthreshold current and that the clamp circuitry effectively decreases the subthreshold current.
|ジャーナル||IEEE Journal of Solid-State Circuits|
|出版ステータス||Published - 1983 8|
ASJC Scopus subject areas
- Electrical and Electronic Engineering