Effects of Al 2O 3 films in the system of Au/Al joint widely used in semi-conductor devices at present have been studied. In the experiment, a thin film of Au/Al 2O 3/Al was used, and the diffusion of Au atoms across through Al 2O 3 films and the formation of intermetallic compound at temperatures between 25°C and 500°C were observed by using Auger electron spectroscopy, X-ray photoelectron spectroscopy, electric resistance measurement and secondary ion mass spectrometer with using 18O as a tracer. It has been cleared from test results that, (1) Au diffuses through Al 2O 3 films and reacts to Al, (2) as temperature rises up, the intermetallic compound grows in an island formation for Au/Al 2O 3/Al system, and (3) the behavior of its growth varies with the presence of oxygen in the atmosphere applied. On the basis of the above results, the effects of Al 2O 3 films on the reliability of Au/Al joint are discussed in this paper.
|ジャーナル||Nippon Steel Technical Report|
|出版ステータス||Published - 1997 1|
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