Effects of biaxial strain on exciton resonance energies of hexagonal GaN heteroepitaxial layers

S. Chichibu*, A. Shikanai, T. Azuhata, T. Sota, A. Kuramata, K. Horino, S. Nakamura

*この研究の対応する著者

研究成果: Article査読

105 被引用数 (Scopus)

抄録

Exciton resonance energies of hexagonal (h-) GaN(0001) epilayers were determined by a combination of high-resolution modulated photoreflectance methods. The results were analyzed thoretically using the Luttinger-Kohn type Hamiltonian for the valence bands under the in-plain biaxial stress, and we obtained the shear deformation potential constants and energy gap in unstrained crystal. Occurrence of the anticrossing of B and C valence bands in tensile biaxially strained h-GaN was suggested.

本文言語English
ページ(範囲)3766-3768
ページ数3
ジャーナルApplied Physics Letters
68
26
DOI
出版ステータスPublished - 1996

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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