Effects of biaxial strain on exciton resonance energies of hexagonal GaN heteroepitaxial layers

S. Chichibu; A. Shikanai; T. Azuhata; T. Sota; A. Kuramata; K. Horino; S. Nakamura

doi:10.1063/1.116000

Effects of biaxial strain on exciton resonance energies of hexagonal GaN heteroepitaxial layers

S. Chichibu^*, A. Shikanai, T. Azuhata, T. Sota, A. Kuramata, K. Horino, S. Nakamura

^*この研究の対応する著者

先進理工学部

研究成果: Article › 査読

105 被引用数 (Scopus)

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Exciton resonance energies of hexagonal (h-) GaN(0001) epilayers were determined by a combination of high-resolution modulated photoreflectance methods. The results were analyzed thoretically using the Luttinger-Kohn type Hamiltonian for the valence bands under the in-plain biaxial stress, and we obtained the shear deformation potential constants and energy gap in unstrained crystal. Occurrence of the anticrossing of B and C valence bands in tensile biaxially strained h-GaN was suggested.

本文言語	English
ページ（範囲）	3766-3768
ページ数	3
ジャーナル	Applied Physics Letters
巻	68
号	26
DOI	https://doi.org/10.1063/1.116000
出版ステータス	Published - 1996

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物理学および天文学（その他）

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abstract = "Exciton resonance energies of hexagonal (h-) GaN(0001) epilayers were determined by a combination of high-resolution modulated photoreflectance methods. The results were analyzed thoretically using the Luttinger-Kohn type Hamiltonian for the valence bands under the in-plain biaxial stress, and we obtained the shear deformation potential constants and energy gap in unstrained crystal. Occurrence of the anticrossing of B and C valence bands in tensile biaxially strained h-GaN was suggested.",

author = "S. Chichibu and A. Shikanai and T. Azuhata and T. Sota and A. Kuramata and K. Horino and S. Nakamura",

year = "1996",

doi = "10.1063/1.116000",

language = "English",

volume = "68",

pages = "3766--3768",

journal = "Applied Physics Letters",

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T1 - Effects of biaxial strain on exciton resonance energies of hexagonal GaN heteroepitaxial layers

AU - Chichibu, S.

AU - Shikanai, A.

AU - Azuhata, T.

AU - Sota, T.

AU - Kuramata, A.

AU - Horino, K.

AU - Nakamura, S.

PY - 1996

Y1 - 1996

N2 - Exciton resonance energies of hexagonal (h-) GaN(0001) epilayers were determined by a combination of high-resolution modulated photoreflectance methods. The results were analyzed thoretically using the Luttinger-Kohn type Hamiltonian for the valence bands under the in-plain biaxial stress, and we obtained the shear deformation potential constants and energy gap in unstrained crystal. Occurrence of the anticrossing of B and C valence bands in tensile biaxially strained h-GaN was suggested.

AB - Exciton resonance energies of hexagonal (h-) GaN(0001) epilayers were determined by a combination of high-resolution modulated photoreflectance methods. The results were analyzed thoretically using the Luttinger-Kohn type Hamiltonian for the valence bands under the in-plain biaxial stress, and we obtained the shear deformation potential constants and energy gap in unstrained crystal. Occurrence of the anticrossing of B and C valence bands in tensile biaxially strained h-GaN was suggested.

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EP - 3768

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 26

ER -

Effects of biaxial strain on exciton resonance energies of hexagonal GaN heteroepitaxial layers

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