Effects of crystalline polarity and temperature gradient on step bunching behavior of off-axis 4H-SiC solution growth

S. Endo*, K. Kamei, Y. Kishida, K. Moriguchi

*この研究の対応する著者

研究成果: Conference contribution

2 被引用数 (Scopus)

抄録

The off-axis solution growth of 4H-SiC was studied focusing on the morphological instabilities by using conventional TSSG technique. The morphology depends strongly on the crystalline polarity, and that on Si surface can be characterized by wandering while that on C surface is characterized by strong step-bunching. By raising the temperature gradient, step bunching on Si surface is considerably suppressed which can be consistent to the constitutional super cooling scheme. However, C surface exhibits strong step bunching as the temperature gradient increase. These behaviors can be explained by the difference in Ehrlich-Schwoebel barrier and diffusion behavior of adatoms.

本文言語English
ホスト出版物のタイトルMaterials Science Forum
出版社Trans Tech Publications Ltd
ページ26-30
ページ数5
821-823
ISBN(印刷版)9783038354789
DOI
出版ステータスPublished - 2015
外部発表はい
イベントEuropean Conference on Silicon Carbide and Related Materials, ECSCRM 2014 - Grenoble, France
継続期間: 2014 9月 212014 9月 25

出版物シリーズ

名前Materials Science Forum
821-823
ISSN(印刷版)02555476

Other

OtherEuropean Conference on Silicon Carbide and Related Materials, ECSCRM 2014
国/地域France
CityGrenoble
Period14/9/2114/9/25

ASJC Scopus subject areas

  • 材料科学(全般)
  • 凝縮系物理学
  • 機械工学
  • 材料力学

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