Effects of double-cladding structure on LPE-grown InGaAsP/InP lasers in the 1.5 µm range

Shigeyuki Akiba, Kazuo Sakai, Yuichi Matsushima, Takaya Yamamoto

研究成果: Article査読

9 被引用数 (Scopus)

抄録

The effects of a double-cladding structure, made on an active layer and consisting of a quaternary buffer layer and an InP layer, on LPE-grown InGaAsP/InP lasers in the 1.5 µm range are reported. A smoother hetero-interface, lower threshold current density and smaller threshold current temperature dependence were obtained in comparison with DH lasers having only a quaternary cladding layer. As for reliability, no undersirable effects due to the insertion of an additional buffer layer have been found.

本文言語English
ページ(範囲)L79-L82
ジャーナルJapanese Journal of Applied Physics
19
2
DOI
出版ステータスPublished - 1980
外部発表はい

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

フィンガープリント 「Effects of double-cladding structure on LPE-grown InGaAsP/InP lasers in the 1.5 µm range」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル