Effects of electron irradiation on two-dimensional electron gas in algaas/gaas heterostructure

Toshimi Wada, Toshihiko Kanayama, Shingo Ichimura, Yoshinobu Sugiyama, Shunji Mlsawa, Masanori Komuro

研究成果: Article査読

4 被引用数 (Scopus)

抄録

This paper describes how the two-dimensional electron gases in AlGaAs/GaAs heterostructures are degraded by low-energy electron irradiation. Both the electron mobility and the two-dimensional carriers are shown to decrease considerably by a 1 x 1017/cm2 irradiation with the incident electron energy of 8 keV. Comparing the experimental results both with the Monte Carlo simulation and with the theoretical mobility calculation, we speculated that the mobility degradation and the 2D carrier compensation are partly caused by the formation of complex defects in the GaAs buffer layer which are due to the excitations of core electrons of As and that the mobility is further degraded by the formation of short-range scatterers in the AlGaAs/GaAs heterointerface.

本文言語English
ページ(範囲)6262-6267
ページ数6
ジャーナルJapanese journal of applied physics
32
12 S
DOI
出版ステータスPublished - 1993 12月
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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