Effects of energetic negative ions generated from sputtering targets on ScAlN film growth

Shinji Takayanagi, Mami Matsukawa, Takahiko Yanagitani

研究成果: Conference contribution

6 被引用数 (Scopus)

抄録

ScAlN films is attractive for high-frequency piezoelectric devices. In previous study, we demonstrated Sc ingot sputtering in which Sc ingots were set on an Al metal target. Oxidization of Sc ingots was seriously problem because the c-axis orientation of ScAlN films was degraded. In this study, we investigated the energy distributions of O- negative ion which enter the substrate during the deposition. The amount of the O- ion flux decreased with duration, but it remained large. Therefore, the crystalline orientation and the longitudinal mode conversion loss of ScAlN film were inferior to those using a ScAl alloy target. The suppression of the O- generation is required.

本文言語English
ホスト出版物のタイトル2016 IEEE International Ultrasonics Symposium, IUS 2016
出版社IEEE Computer Society
ISBN(電子版)9781467398978
DOI
出版ステータスPublished - 2016 11 1
イベント2016 IEEE International Ultrasonics Symposium, IUS 2016 - Tours, France
継続期間: 2016 9 182016 9 21

出版物シリーズ

名前IEEE International Ultrasonics Symposium, IUS
2016-November
ISSN(印刷版)1948-5719
ISSN(電子版)1948-5727

Other

Other2016 IEEE International Ultrasonics Symposium, IUS 2016
国/地域France
CityTours
Period16/9/1816/9/21

ASJC Scopus subject areas

  • 音響学および超音波学

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