Effects of energetic negative ions generated from sputtering targets on ScAlN film growth

Shinji Takayanagi, Mami Matsukawa, Takahiko Yanagitani

    研究成果: Conference contribution

    4 引用 (Scopus)

    抄録

    ScAlN films is attractive for high-frequency piezoelectric devices. In previous study, we demonstrated Sc ingot sputtering in which Sc ingots were set on an Al metal target. Oxidization of Sc ingots was seriously problem because the c-axis orientation of ScAlN films was degraded. In this study, we investigated the energy distributions of O- negative ion which enter the substrate during the deposition. The amount of the O- ion flux decreased with duration, but it remained large. Therefore, the crystalline orientation and the longitudinal mode conversion loss of ScAlN film were inferior to those using a ScAl alloy target. The suppression of the O- generation is required.

    元の言語English
    ホスト出版物のタイトル2016 IEEE International Ultrasonics Symposium, IUS 2016
    出版者IEEE Computer Society
    2016-November
    ISBN(電子版)9781467398978
    DOI
    出版物ステータスPublished - 2016 11 1
    イベント2016 IEEE International Ultrasonics Symposium, IUS 2016 - Tours, France
    継続期間: 2016 9 182016 9 21

    Other

    Other2016 IEEE International Ultrasonics Symposium, IUS 2016
    France
    Tours
    期間16/9/1816/9/21

    Fingerprint

    ingots
    negative ions
    sputtering
    energy distribution
    retarding
    metals
    ions

    ASJC Scopus subject areas

    • Acoustics and Ultrasonics

    これを引用

    Takayanagi, S., Matsukawa, M., & Yanagitani, T. (2016). Effects of energetic negative ions generated from sputtering targets on ScAlN film growth. : 2016 IEEE International Ultrasonics Symposium, IUS 2016 (巻 2016-November). [7728836] IEEE Computer Society. https://doi.org/10.1109/ULTSYM.2016.7728836

    Effects of energetic negative ions generated from sputtering targets on ScAlN film growth. / Takayanagi, Shinji; Matsukawa, Mami; Yanagitani, Takahiko.

    2016 IEEE International Ultrasonics Symposium, IUS 2016. 巻 2016-November IEEE Computer Society, 2016. 7728836.

    研究成果: Conference contribution

    Takayanagi, S, Matsukawa, M & Yanagitani, T 2016, Effects of energetic negative ions generated from sputtering targets on ScAlN film growth. : 2016 IEEE International Ultrasonics Symposium, IUS 2016. 巻. 2016-November, 7728836, IEEE Computer Society, 2016 IEEE International Ultrasonics Symposium, IUS 2016, Tours, France, 16/9/18. https://doi.org/10.1109/ULTSYM.2016.7728836
    Takayanagi S, Matsukawa M, Yanagitani T. Effects of energetic negative ions generated from sputtering targets on ScAlN film growth. : 2016 IEEE International Ultrasonics Symposium, IUS 2016. 巻 2016-November. IEEE Computer Society. 2016. 7728836 https://doi.org/10.1109/ULTSYM.2016.7728836
    Takayanagi, Shinji ; Matsukawa, Mami ; Yanagitani, Takahiko. / Effects of energetic negative ions generated from sputtering targets on ScAlN film growth. 2016 IEEE International Ultrasonics Symposium, IUS 2016. 巻 2016-November IEEE Computer Society, 2016.
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    abstract = "ScAlN films is attractive for high-frequency piezoelectric devices. In previous study, we demonstrated Sc ingot sputtering in which Sc ingots were set on an Al metal target. Oxidization of Sc ingots was seriously problem because the c-axis orientation of ScAlN films was degraded. In this study, we investigated the energy distributions of O- negative ion which enter the substrate during the deposition. The amount of the O- ion flux decreased with duration, but it remained large. Therefore, the crystalline orientation and the longitudinal mode conversion loss of ScAlN film were inferior to those using a ScAl alloy target. The suppression of the O- generation is required.",
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