Effects of Hf and W doping on the commensurate charge density waves in 1T-TaS2

Hiroshi Fujimoto*, Hajime Ozaki

*この研究の対応する著者

研究成果: Article査読

12 被引用数 (Scopus)

抄録

The electrical resistivities of Hf-doped and W-doped 1T-TaS2 have been measured to investigate the influence of varying the Fermi level on the formation of commensurate charge density waves. It was found that W-doping is far more effective in breaking the C-CDW phase than Hf-doping. Such results are explained by the energy consideration of the system with the Hubbard gap which is produced by the Mott-localization.

本文言語English
ページ(範囲)1117-1119
ページ数3
ジャーナルSolid State Communications
49
12
DOI
出版ステータスPublished - 1984 3

ASJC Scopus subject areas

  • 化学 (全般)
  • 凝縮系物理学
  • 材料化学

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