Effects of indium diffusion on the properties of ZnSe:Mn dc thin-film electroluminescent devices

Masakazu Kobayashi, Naoki Mino, Makoto Konagai, Kiyoshi Takahashi

研究成果: Article査読

2 被引用数 (Scopus)

抄録

ZnSe:Mn dc thin-film electroluminescent (EL) devices were prepared by a molecular beam growth method on glass substrates coated with transparent conductive oxide. We found that the EL properties were affected by the grade of the oxide. The EL properties were found to depend on the range of indium diffusion from the oxide to the ZnSe:Mn host layer. The effective thickness of the host layer was varied by the In diffusion. Based upon these results, we have proposed a new type of dc thin-film EL cell, namely an Al/ZnSe:Mn/ZnSe:In/oxide structure. A ZnSe:In layer was prepared as a buffer layer that would improve the crystallinity of the ZnSe:Mn host layer.

本文言語English
ページ(範囲)2905-2908
ページ数4
ジャーナルJournal of Applied Physics
57
8
DOI
出版ステータスPublished - 1985
外部発表はい

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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