The effects of ion implantation and thermal annealing upon the photoluminescence (PL) are investigated in a-Si3N4 films prepared by low pressure CVD. A broad PL band centered at 2.4 eV is observed in the as-deposited sample. When the a-Si3N4 films are implanted by ions or annealed at high temperature, the PL is quenched. In the thermally annealed samples, the PL intensity is directly proportional to the amount of hydrogen-related bonds such as Si-H and N-H. From the similarity to the PL in a-Si:H, the defects formed by hydrogen-release or bond-breaking act as an nonradiative recombination centers in a-Si3N4.
|出版ステータス||Published - 1998 12月 1|
|イベント||Proceedings of the 1998 International Symposium on Electrical Insulating Materials - Toyohashi, Jpn|
継続期間: 1998 9月 27 → 1998 9月 30
|Other||Proceedings of the 1998 International Symposium on Electrical Insulating Materials|
|Period||98/9/27 → 98/9/30|
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