Effects of ion implantation and thermal annealing on the photoluminescence in amorphous silicon nitride films

K. S. Seol; T. Futami; T. Watanabe; Y. Ohki; M. Takiyama

Effects of ion implantation and thermal annealing on the photoluminescence in amorphous silicon nitride films

K. S. Seol^*, T. Futami, T. Watanabe, Y. Ohki, M. Takiyama

^*この研究の対応する著者

先進理工学部

研究成果: Paper › 査読

抄録

The effects of ion implantation and thermal annealing upon the photoluminescence (PL) are investigated in a-Si₃N₄ films prepared by low pressure CVD. A broad PL band centered at 2.4 eV is observed in the as-deposited sample. When the a-Si₃N₄ films are implanted by ions or annealed at high temperature, the PL is quenched. In the thermally annealed samples, the PL intensity is directly proportional to the amount of hydrogen-related bonds such as Si-H and N-H. From the similarity to the PL in a-Si:H, the defects formed by hydrogen-release or bond-breaking act as an nonradiative recombination centers in a-Si₃N₄.

本文言語	English
ページ	127-130
ページ数	4
出版ステータス	Published - 1998 12月 1
イベント	Proceedings of the 1998 International Symposium on Electrical Insulating Materials - Toyohashi, Jpn 継続期間: 1998 9月 27 → 1998 9月 30

Other

Other	Proceedings of the 1998 International Symposium on Electrical Insulating Materials
City	Toyohashi, Jpn
Period	98/9/27 → 98/9/30

ASJC Scopus subject areas

工学（全般）
材料科学（全般）

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title = "Effects of ion implantation and thermal annealing on the photoluminescence in amorphous silicon nitride films",

abstract = "The effects of ion implantation and thermal annealing upon the photoluminescence (PL) are investigated in a-Si3N4 films prepared by low pressure CVD. A broad PL band centered at 2.4 eV is observed in the as-deposited sample. When the a-Si3N4 films are implanted by ions or annealed at high temperature, the PL is quenched. In the thermally annealed samples, the PL intensity is directly proportional to the amount of hydrogen-related bonds such as Si-H and N-H. From the similarity to the PL in a-Si:H, the defects formed by hydrogen-release or bond-breaking act as an nonradiative recombination centers in a-Si3N4.",

author = "Seol, {K. S.} and T. Futami and T. Watanabe and Y. Ohki and M. Takiyama",

year = "1998",

month = dec,

day = "1",

language = "English",

pages = "127--130",

note = "Proceedings of the 1998 International Symposium on Electrical Insulating Materials ; Conference date: 27-09-1998 Through 30-09-1998",

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TY - CONF

T1 - Effects of ion implantation and thermal annealing on the photoluminescence in amorphous silicon nitride films

AU - Seol, K. S.

AU - Futami, T.

AU - Watanabe, T.

AU - Ohki, Y.

AU - Takiyama, M.

PY - 1998/12/1

Y1 - 1998/12/1

N2 - The effects of ion implantation and thermal annealing upon the photoluminescence (PL) are investigated in a-Si3N4 films prepared by low pressure CVD. A broad PL band centered at 2.4 eV is observed in the as-deposited sample. When the a-Si3N4 films are implanted by ions or annealed at high temperature, the PL is quenched. In the thermally annealed samples, the PL intensity is directly proportional to the amount of hydrogen-related bonds such as Si-H and N-H. From the similarity to the PL in a-Si:H, the defects formed by hydrogen-release or bond-breaking act as an nonradiative recombination centers in a-Si3N4.

AB - The effects of ion implantation and thermal annealing upon the photoluminescence (PL) are investigated in a-Si3N4 films prepared by low pressure CVD. A broad PL band centered at 2.4 eV is observed in the as-deposited sample. When the a-Si3N4 films are implanted by ions or annealed at high temperature, the PL is quenched. In the thermally annealed samples, the PL intensity is directly proportional to the amount of hydrogen-related bonds such as Si-H and N-H. From the similarity to the PL in a-Si:H, the defects formed by hydrogen-release or bond-breaking act as an nonradiative recombination centers in a-Si3N4.

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M3 - Paper

AN - SCOPUS:0032319179

SP - 127

EP - 130

T2 - Proceedings of the 1998 International Symposium on Electrical Insulating Materials

Y2 - 27 September 1998 through 30 September 1998

ER -

Effects of ion implantation and thermal annealing on the photoluminescence in amorphous silicon nitride films

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