Effects of ion implantation and thermal annealing on the photoluminescence in amorphous silicon nitride

Kwang Soo Seol, Tsuyoshi Futami, Takashi Watanabe, Yoshimichi Ohki, Makoto Takiyama

研究成果: Article査読

27 被引用数 (Scopus)

抄録

The effects of thermal annealing and ion implantation on the photoluminescence (PL) in amorphous silicon nitride (a-SiNx) prepared by low-pressure chemical vapor deposition (LPCVD) are investigated. A broad PL band centered at 2.4 eV, consisting of two component PL bands at 2.66 and 2.15 eV, is observed in the as-deposited sample. The PL intensity is found to decrease if the film is thermally annealed, while the decreased PL intensity of the ion-implanted film recovers by the thermal annealing. Based on these results, it is shown that the defects generated by hydrogen release or bond breaking act as nonradiative recombination centers that quench the PL.

本文言語English
ページ(範囲)6746-6750
ページ数5
ジャーナルJournal of Applied Physics
85
9
DOI
出版ステータスPublished - 1999 5月 1

ASJC Scopus subject areas

  • 物理学および天文学(全般)

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