Effects of nano-filler addition on partial discharge resistance and dielectric breakdown strength of Micro-Al2O3/epoxy composite

Zhe Li*, Kenji Okamoto, Yoshimichi Ohki, Toshikatsu Tanaka

*この研究の対応する著者

研究成果: Article査読

141 被引用数 (Scopus)

抄録

It is often observed that the insulation structure for an insulated gate bipolar transistor (IGBT) suffers from dielectric failure, when the insulation is made of epoxy resin to which micro fillers with a high thermal conductivity were added. In order to reveal the above phenomena and to clarify the breakdown (BD) mechanism, we have carried out experiments using an MB-PWB (metal-base printed wiring board) insulation simulated structure. As a result, it was clarified that the IGBT insulation breaks down after successive partial discharges (PDs). It was also elucidated that BD strength becomes lower, when epoxy resin was loaded with high content of micro-fillers. A trial was made to raise the once-lowered BD strength by adding nano-Al2O3 fillers. Three kinds of experiments were carried out, i.e. an MB-PWB insulation simulated structure for dielectric failure, a rod-to-plane electrode for PD erosion resistance, and a sphere-tosphere electrode for BD strength for four kinds of insulation samples, i.e. neat epoxy, 5-wt% nano-Al2O 3/epoxy composite, 60-wt% micro-Al2O3/epoxy composite, and combined 2-wt% nano- and 60-wt% micro-Al2O 3/epoxy composite. It was clarified that the nano-micro-composite is higher in both BD strength and PD resistance than the micro-composite. It should be noted that the addition of nano-fillers would provide an excellent approach that can increase the dielectric BD strength and time of micro-filled epoxy composites.

本文言語English
論文番号5492235
ページ(範囲)653-661
ページ数9
ジャーナルIEEE Transactions on Dielectrics and Electrical Insulation
17
3
DOI
出版ステータスPublished - 2010 6月

ASJC Scopus subject areas

  • 電子工学および電気工学

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