We have studied the effects of nitrogen implantation into P+ poly-silicon gate on gate oxide properties in detail for the surface channel PMOS below 0.25 μm. It was founded that boron penetration through the gate oxide film can be effectively suppressed by nitrogen implantation into P+ poly-silicon gate. Moreover the generation of interface states and traps can be also reduced by nitrogen implantation. Therefore the resistance against the hot carrier injection can be dramatically improved. These improvement would be due to the incorporation of nitrogen into gate oxide film and the reduction of boron and fluorine atoms in the gate oxide film.
|ジャーナル||Digest of Technical Papers - Symposium on VLSI Technology|
|出版ステータス||Published - 1994 12月 1|
|イベント||Proceedings of the 1994 Symposium on VLSI Technology - Honolulu, HI, USA|
継続期間: 1994 6月 7 → 1994 6月 9
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