Effects of nitrogen implantation into P+ poly-silicon gate on gate oxide properties

T. Kuroi*, S. Kusunoki, M. Shirahata, Y. Okumura, M. Kobayashi, M. Inuishi, N. Tsubouchi

*この研究の対応する著者

研究成果: Conference article査読

23 被引用数 (Scopus)

抄録

We have studied the effects of nitrogen implantation into P+ poly-silicon gate on gate oxide properties in detail for the surface channel PMOS below 0.25 μm. It was founded that boron penetration through the gate oxide film can be effectively suppressed by nitrogen implantation into P+ poly-silicon gate. Moreover the generation of interface states and traps can be also reduced by nitrogen implantation. Therefore the resistance against the hot carrier injection can be dramatically improved. These improvement would be due to the incorporation of nitrogen into gate oxide film and the reduction of boron and fluorine atoms in the gate oxide film.

本文言語English
ページ(範囲)107-108
ページ数2
ジャーナルDigest of Technical Papers - Symposium on VLSI Technology
出版ステータスPublished - 1994 12月 1
外部発表はい
イベントProceedings of the 1994 Symposium on VLSI Technology - Honolulu, HI, USA
継続期間: 1994 6月 71994 6月 9

ASJC Scopus subject areas

  • 電子工学および電気工学

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