Effects of ozone treatment of 4H-SiC(0001) surface

R. Kosugi, S. Ichimura, A. Kurokawa, K. Koike, K. Fukuda, S. Suzuki, H. Okushi, S. Yoshida, K. Arai

研究成果: Conference article

10 引用 (Scopus)

抜粋

The effects of high-concentration ozone gas ( approximately 25%) exposure at atmospheric pressure with and without ultraviolet (UV) irradiation to a 4H-SiC(0001) surface has been investigated by X-ray photoelectron spectroscopy (XPS). The C 1s XPS spectrum for the 4H-SiC surface after standard RCA cleaning showed the appearance of a chemically shifted peak on the higher binding energy side of the SiC bulk peak. The chemically shifted peak was also observed even for the surface prepared by dipping a sample with sacrificed oxide film into 5% HF solution. Curve-fitting analysis using the Gaussian function revealed that the chemically shifted peak consisted of three components. The chemically shifted peak could be sufficiently eliminated using ozone exposure with UV irradiation. The cleaning mechanism of the 4H-SiC surface by ozone exposure is discussed, referring to the analysis of peak intensity for each component under different surface conditions corresponding to RCA cleaning and ozone exposure with and without UV irradiation.

元の言語English
ページ(範囲)550-555
ページ数6
ジャーナルApplied Surface Science
159
DOI
出版物ステータスPublished - 2000 6
イベント3rd International Symposium on the Control of Semiconductor Interfaces (ISCSI-3) - Karuizawa, Jpn
継続期間: 1999 10 251999 10 29

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ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

これを引用

Kosugi, R., Ichimura, S., Kurokawa, A., Koike, K., Fukuda, K., Suzuki, S., Okushi, H., Yoshida, S., & Arai, K. (2000). Effects of ozone treatment of 4H-SiC(0001) surface. Applied Surface Science, 159, 550-555. https://doi.org/10.1016/S0169-4332(00)00092-1