Effects of plasma potential on diamond deposition at low pressure using magneto-microwave plasma chemical vapor deposition

Jin Wei*, Hiroshi Kawarada, Jun ichi Suzuki, Jing Shing Ma, Akio Hiraki

*この研究の対応する著者

研究成果: Article査読

4 被引用数 (Scopus)

抄録

At the low pressure of 0.1 Torr, we have controlled the plasma potential during diamond deposition for the first time using a magneto-microwave plasma chemical vapor deposition (CVD) system. The potential difference between plasma and substrate is an important factor for fabrication of diamond at this pressure. By lowering the plasma potential, high-quality diamond films have been formed. The films were evaluated by scanning electron microscope (SM) imaging, electron diffraction and Raman spectroscopy.

本文言語English
ページ(範囲)1279-1280
ページ数2
ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
30
6
出版ステータスPublished - 1991 6月
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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