抄録
At the low pressure of 0.1 Torr, we have controlled the plasma potential during diamond deposition for the first time using a magneto-microwave plasma chemical vapor deposition (CVD) system. The potential difference between plasma and substrate is an important factor for fabrication of diamond at this pressure. By lowering the plasma potential, high-quality diamond films have been formed. The films were evaluated by scanning electron microscope (SM) imaging, electron diffraction and Raman spectroscopy.
| 本文言語 | English |
|---|---|
| ページ（範囲） | 1279-1280 |
| ページ数 | 2 |
| ジャーナル | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
| 巻 | 30 |
| 号 | 6 |
| 出版ステータス | Published - 1991 6月 |
| 外部発表 | はい |
ASJC Scopus subject areas
- 工学（全般）
- 物理学および天文学（全般）