Effects of plasma potential on diamond deposition at low pressure using magneto-microwave plasma chemical vapor deposition

Jin Wei, Hiroshi Kawarada, Jun Ichi Suzuki, Jing Shing Ma, Akio Hiraki

研究成果: Article査読

抄録

At the low pressure of 0.1 Torr, we have controlled the plasma potential during diamond deposition for the first time using a magneto-microwave plasma chemical vapor deposition (CVD) system. The potential difference between plasma and substrate is an important factor for fabrication of diamond at this pressure. By lowering the plasma potential, high- quality diamond films have been formed. The films were evaluated by scanning electron microscope (SM) imaging, electron diffraction and Raman spectroscopy.

本文言語English
ページ(範囲)L279-L280
ジャーナルJapanese journal of applied physics
30
6 R
DOI
出版ステータスPublished - 1991 6

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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