Effects of sputtering gas conditions on formation of (1120) textured ZnO films

Takayuki Kawamoto, Takahiko Yanagitani, Mami Matsukawa, Yoshiaki Watanabe

研究成果: Article査読

16 被引用数 (Scopus)

抄録

The ZnO films in which the crystallite c-axis is unidirectionally aligned in the substrate plane [(112̄0) textured ZnO films] enable the realization of shear mode devices in the ultra high frequency (UHF) range. In this study, we have investigated the (112̄0 textured ZnO film, focusing on the effect of total gas pressure and partial gas pressure of oxygen and argon during sputtering deposition. The crystallographic characteristics of the films were measured by X-ray diffraction (XRD) analysis. In addition, optical emissions from the RF plasma were analyzed to investigate the effect of ionic species on the growth of the ZnO films. Highly crystallized (112̄0) textured ZnO films were obtained under the conditions of low total gas pressure and high oxygen gas concentration. Under these conditions, strong optical emission spectra from oxygen species were observed. From these results, we conclude that energetic oxygen particle bombardment to the substrate contributes to the (112̄0) texture formation. The film with an ω-scan rocking curve FWHM of 3.3° showed a k15 value of 0.16, which was 62% of the value for a single crystal.

本文言語English
ページ(範囲)4660-4664
ページ数5
ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
46
7 B
DOI
出版ステータスPublished - 2007 7 26
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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