Effects of strain on carrier recombination in GaN quantum dots

A. Neogi, H. O. Everitt, H. Morkoç, T. Kuroda, A. Tackeuchi

研究成果: Paper

抜粋

Strain-induced modification of recombination dynamics in single layer (SQDs) and stacked (MQDs) GaN quantum dots is compared by time-resolved photoluminescence spectroscopy. Large strain induced built-in fields increases the radiative recombination time in SQDs by over an order of magnitude while stacking significantly reduces nonradiative recombination channels and increases the emission efficiency at room temperature.

元の言語English
ページQWA16/1-QWA16/2
出版物ステータスPublished - 2003 12 1
イベントTrends in Optics and Photonics Series: Quantum electronics and Laser Science (QELS) - Baltimore, MD., United States
継続期間: 2003 6 12003 6 6

Conference

ConferenceTrends in Optics and Photonics Series: Quantum electronics and Laser Science (QELS)
United States
Baltimore, MD.
期間03/6/103/6/6

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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  • これを引用

    Neogi, A., Everitt, H. O., Morkoç, H., Kuroda, T., & Tackeuchi, A. (2003). Effects of strain on carrier recombination in GaN quantum dots. QWA16/1-QWA16/2. 論文発表場所 Trends in Optics and Photonics Series: Quantum electronics and Laser Science (QELS), Baltimore, MD., United States.