Effects of strain on carrier recombination in GaN quantum dots

A. Neogi*, H. O. Everitt, H. Morkoç, T. Kuroda, A. Tackeuchi

*この研究の対応する著者

研究成果: Paper査読

抄録

Strain-induced modification of recombination dynamics in single layer (SQDs) and stacked (MQDs) GaN quantum dots is compared by time-resolved photoluminescence spectroscopy. Large strain induced built-in fields increases the radiative recombination time in SQDs by over an order of magnitude while stacking significantly reduces nonradiative recombination channels and increases the emission efficiency at room temperature.

本文言語English
ページQWA16/1-QWA16/2
出版ステータスPublished - 2003 12 1
イベントTrends in Optics and Photonics Series: Quantum electronics and Laser Science (QELS) - Baltimore, MD., United States
継続期間: 2003 6 12003 6 6

Conference

ConferenceTrends in Optics and Photonics Series: Quantum electronics and Laser Science (QELS)
国/地域United States
CityBaltimore, MD.
Period03/6/103/6/6

ASJC Scopus subject areas

  • 物理学および天文学(全般)

フィンガープリント

「Effects of strain on carrier recombination in GaN quantum dots」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル