TY - GEN
T1 - Effects of Strain on Carrier Recombination in GaN Quantum Dots
AU - Neogi, A.
AU - Everitt, H. O.
AU - Morkoç, H.
AU - Kuroda, T.
AU - Tackeuchi, A.
N1 - Publisher Copyright:
© 2003 OSA/QELS 2003.
PY - 2003
Y1 - 2003
N2 - Strain-induced modification of recombination dynamics in single layer (SQDs) and stacked (MQDs) GaN quantum dots is compared by time-resolved photoluminescence spectroscopy. Large strain induced built-in fields increases the radiative recombination time in SQDs by over an order of magnitude while stacking significantly reduces nonradiative recombination channels and increases the emission efficiency at room temperature.
AB - Strain-induced modification of recombination dynamics in single layer (SQDs) and stacked (MQDs) GaN quantum dots is compared by time-resolved photoluminescence spectroscopy. Large strain induced built-in fields increases the radiative recombination time in SQDs by over an order of magnitude while stacking significantly reduces nonradiative recombination channels and increases the emission efficiency at room temperature.
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M3 - Conference contribution
AN - SCOPUS:85135467780
T3 - Optics InfoBase Conference Papers
BT - Quantum Electronics and Laser Science Conference, QELS 2003
PB - Optica Publishing Group (formerly OSA)
T2 - Quantum Electronics and Laser Science Conference, QELS 2003
Y2 - 1 June 2003 through 6 June 2003
ER -