Efficient current-driven magnetization switching owing to isotropic magnetism in a highly symmetric 111-oriented Mn4N epitaxial single layer

Shinji Isogami*, Nagalingam Rajamanickam, Yusuke Kozuka, Yukiko K. Takahashi

*この研究の対応する著者

研究成果査読

抄録

We investigated in-plane current-induced magnetization switching in a Mn4N epitaxial single layer. Efficient magnetization switching was detected via the measurement of anomalous Hall resistivity after the application of current pulses, with a duration of 1 s, to the 111-oriented Mn4N film compared with a reference 001-oriented Mn4N film. The threshold current density of magnetization switching with 0.5 s pulse durations, Jc ≈ 1 MA/cm2, was relatively low compared with that reported for magnetic tunnel junctions and/or ferromagnet/heavy metal bilayer systems. The relatively low Jc in the 111-oriented film was attributed to the low magnetic anisotropy on the (111) plane of Mn4N owing to the isotropic crystal symmetry as revealed by x-ray diffraction and transmission electron microscopy as a reduced switching barrier boosts the probability of magnetization switching. It was concluded that manipulation of the magnetic anisotropy based on the crystal orientation is one of the promising approaches to develop materials suitable for application in highly efficient switching devices with Mn4N layers.

本文言語English
論文番号105314
ジャーナルAIP Advances
11
10
DOI
出版ステータスPublished - 2021 10 1
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(全般)

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