Efficient hole generation above 1019 cm-3 in Mg-doped in GaN/GaN superlattices at room temperature

Kazuhide Kumakura, Toshiki Makimoto, Naoki Kobayashi

研究成果: Article

51 引用 (Scopus)

抄録

We achieved spatially averaged hole concentrations above 1019 cm-3 at room temperature in Mg-doped InxGa1-xN/GaN (4 nm/4 nm) superlattices grown by metalorganic vapor phase epitaxy. The hole concentrations for the InxGa1-xN /GaN superlattices increased with the In mole fraction, and the maximum hole concentration reached 2.8 × 1019 cm-3 for the In0.22Ga0.78N/GaN superlattice. The hole concentrations for the superlattices are larger than those for the InGaN bulk layers with the same average In mole fraction. The weak temperature dependence of the resistivities for InGaN/GaN superlattices with higher In mole fractions indicates highly efficient hole generation in the superlattice.

元の言語English
ジャーナルJapanese Journal of Applied Physics, Part 2: Letters
39
発行部数3 A/B
出版物ステータスPublished - 2000 3 15
外部発表Yes

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Hole concentration
Superlattices
superlattices
room temperature
Temperature
Metallorganic vapor phase epitaxy
vapor phase epitaxy
temperature dependence
electrical resistivity

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

これを引用

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title = "Efficient hole generation above 1019 cm-3 in Mg-doped in GaN/GaN superlattices at room temperature",
abstract = "We achieved spatially averaged hole concentrations above 1019 cm-3 at room temperature in Mg-doped InxGa1-xN/GaN (4 nm/4 nm) superlattices grown by metalorganic vapor phase epitaxy. The hole concentrations for the InxGa1-xN /GaN superlattices increased with the In mole fraction, and the maximum hole concentration reached 2.8 × 1019 cm-3 for the In0.22Ga0.78N/GaN superlattice. The hole concentrations for the superlattices are larger than those for the InGaN bulk layers with the same average In mole fraction. The weak temperature dependence of the resistivities for InGaN/GaN superlattices with higher In mole fractions indicates highly efficient hole generation in the superlattice.",
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T1 - Efficient hole generation above 1019 cm-3 in Mg-doped in GaN/GaN superlattices at room temperature

AU - Kumakura, Kazuhide

AU - Makimoto, Toshiki

AU - Kobayashi, Naoki

PY - 2000/3/15

Y1 - 2000/3/15

N2 - We achieved spatially averaged hole concentrations above 1019 cm-3 at room temperature in Mg-doped InxGa1-xN/GaN (4 nm/4 nm) superlattices grown by metalorganic vapor phase epitaxy. The hole concentrations for the InxGa1-xN /GaN superlattices increased with the In mole fraction, and the maximum hole concentration reached 2.8 × 1019 cm-3 for the In0.22Ga0.78N/GaN superlattice. The hole concentrations for the superlattices are larger than those for the InGaN bulk layers with the same average In mole fraction. The weak temperature dependence of the resistivities for InGaN/GaN superlattices with higher In mole fractions indicates highly efficient hole generation in the superlattice.

AB - We achieved spatially averaged hole concentrations above 1019 cm-3 at room temperature in Mg-doped InxGa1-xN/GaN (4 nm/4 nm) superlattices grown by metalorganic vapor phase epitaxy. The hole concentrations for the InxGa1-xN /GaN superlattices increased with the In mole fraction, and the maximum hole concentration reached 2.8 × 1019 cm-3 for the In0.22Ga0.78N/GaN superlattice. The hole concentrations for the superlattices are larger than those for the InGaN bulk layers with the same average In mole fraction. The weak temperature dependence of the resistivities for InGaN/GaN superlattices with higher In mole fractions indicates highly efficient hole generation in the superlattice.

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