Efficient si planar doping in GaAs by flow-rate modulation epitaxy

Naoki Kobayashi, Toshiki Makimoto, Yoshiji Horikoshi

研究成果: Article査読

45 被引用数 (Scopus)

抄録

During the growth of GaAs layers by flow-rate modulation epitaxy (FME), triethyl gallium and arsine are alternately supplied on the GaAs substrate. Thus, the Ga atomic surface and As atomic surface appear alternately at the growing surface. These atomic surfaces exhibit very different characteristics in capturing impurity atoms. By supplying 10% silane diluted with hydrogen gas at a flow-rate of 20 cc/min for one second, we have succeeded in obtaining extremely high Si planar doping levels with the maximum sheet carrier density of 1.1 X 1013 cm-2 occurring at the low growth temperature of 550°C.

本文言語English
ページ(範囲)L746-L748
ジャーナルJapanese journal of applied physics
25
9
DOI
出版ステータスPublished - 1986 9
外部発表はい

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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