Electrical and optical properties of InP grown by metalorganic vapor phase epitaxy with extremely low V/III ratios using tertiarybutylphosphine

M. Horita, M. Suzuki, Yuichi Matsushima

研究成果: Article

7 引用 (Scopus)

抄録

Metalorganic vapor phase epitaxy of InP with extremely low V/III ratios less than 10 was successfully carried out by using tertiarybutylphosphine, and detailed electrical and optical properties were investigated for the first time. Featureless surface morphology was obtained even with a V/III ratio of as low as 3. Good electrical properties, such as carrier concentrations of about 6×1014 cm-3 and electron Hall mobilities more than 30 000 cm2/V s measured at 77 K were confirmed, although both Van der Pauw and low-temperature photoluminescence results proved the increased acceptor concentrations in the low V/III ratio range.

元の言語English
ページ(範囲)882-884
ページ数3
ジャーナルApplied Physics Letters
62
発行部数8
DOI
出版物ステータスPublished - 1993
外部発表Yes

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vapor phase epitaxy
electrical properties
optical properties
photoluminescence
electrons

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

これを引用

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AU - Suzuki, M.

AU - Matsushima, Yuichi

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AB - Metalorganic vapor phase epitaxy of InP with extremely low V/III ratios less than 10 was successfully carried out by using tertiarybutylphosphine, and detailed electrical and optical properties were investigated for the first time. Featureless surface morphology was obtained even with a V/III ratio of as low as 3. Good electrical properties, such as carrier concentrations of about 6×1014 cm-3 and electron Hall mobilities more than 30 000 cm2/V s measured at 77 K were confirmed, although both Van der Pauw and low-temperature photoluminescence results proved the increased acceptor concentrations in the low V/III ratio range.

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