Electrical properties in silicon oxynitride and silicon nitride prepared by plasma-enhanced chemical vapor deposition

Hidefumi Sato; Hiromitsu Kato; Yoshimichi Ohki; Kwang Soo Seol; Takashi Noma

Electrical properties in silicon oxynitride and silicon nitride prepared by plasma-enhanced chemical vapor deposition

Hidefumi Sato, Hiromitsu Kato, Yoshimichi Ohki, Kwang Soo Seol, Takashi Noma

先進理工学部

研究成果: Paper › 査読

7 被引用数 (Scopus)

抄録

The conduction mechanism of a-SiO_xN_y:H and a-SiN_z:H is studied by measuring the conduction current and the capacitance-voltage characteristics. The low-field conduction is attributable to the Ohmic process and the high-field conduction is attributable to the Poole-Frenkel (PF) emission for both materials. From the similarity on many aspects of conduction process between the two materials, it is considered that the carriers are transported via the same sites associated with Si-N bonds located in the forbidden band in both materials.

本文言語	English
ページ	148-151
ページ数	4
出版ステータス	Published - 2001 12 1
イベント	Proceedings of 2001 International Symp. on Electrical Insulating Materials (ISEIM 2001) / 2001 Asian Conf. on Electrical Insulation Diagnosis (ACEID 2001) / 33rd Symp. on Electrical and Electronic Insulating Materials and Applications in Systems - Himeji, Japan 継続期間: 2001 11 19 → 2001 11 22

Conference

Conference	Proceedings of 2001 International Symp. on Electrical Insulating Materials (ISEIM 2001) / 2001 Asian Conf. on Electrical Insulation Diagnosis (ACEID 2001) / 33rd Symp. on Electrical and Electronic Insulating Materials and Applications in Systems
Country	Japan
City	Himeji
Period	01/11/19 → 01/11/22

ASJC Scopus subject areas

Engineering(all)
Materials Science(all)

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引用スタイル

Sato, H., Kato, H., Ohki, Y., Seol, K. S., & Noma, T. (2001). Electrical properties in silicon oxynitride and silicon nitride prepared by plasma-enhanced chemical vapor deposition. 148-151. Paper presented at Proceedings of 2001 International Symp. on Electrical Insulating Materials (ISEIM 2001) / 2001 Asian Conf. on Electrical Insulation Diagnosis (ACEID 2001) / 33rd Symp. on Electrical and Electronic Insulating Materials and Applications in Systems, Himeji, Japan.

Electrical properties in silicon oxynitride and silicon nitride prepared by plasma-enhanced chemical vapor deposition. / Sato, Hidefumi; Kato, Hiromitsu; Ohki, Yoshimichi; Seol, Kwang Soo; Noma, Takashi.

2001. 148-151 Paper presented at Proceedings of 2001 International Symp. on Electrical Insulating Materials (ISEIM 2001) / 2001 Asian Conf. on Electrical Insulation Diagnosis (ACEID 2001) / 33rd Symp. on Electrical and Electronic Insulating Materials and Applications in Systems, Himeji, Japan.

研究成果: Paper › 査読

Sato, H, Kato, H, Ohki, Y, Seol, KS & Noma, T 2001, 'Electrical properties in silicon oxynitride and silicon nitride prepared by plasma-enhanced chemical vapor deposition', Paper presented at Proceedings of 2001 International Symp. on Electrical Insulating Materials (ISEIM 2001) / 2001 Asian Conf. on Electrical Insulation Diagnosis (ACEID 2001) / 33rd Symp. on Electrical and Electronic Insulating Materials and Applications in Systems, Himeji, Japan, 01/11/19 - 01/11/22 pp. 148-151.

Sato H, Kato H, Ohki Y, Seol KS, Noma T. Electrical properties in silicon oxynitride and silicon nitride prepared by plasma-enhanced chemical vapor deposition. 2001. Paper presented at Proceedings of 2001 International Symp. on Electrical Insulating Materials (ISEIM 2001) / 2001 Asian Conf. on Electrical Insulation Diagnosis (ACEID 2001) / 33rd Symp. on Electrical and Electronic Insulating Materials and Applications in Systems, Himeji, Japan.

Sato, Hidefumi ; Kato, Hiromitsu ; Ohki, Yoshimichi ; Seol, Kwang Soo ; Noma, Takashi. / Electrical properties in silicon oxynitride and silicon nitride prepared by plasma-enhanced chemical vapor deposition. Paper presented at Proceedings of 2001 International Symp. on Electrical Insulating Materials (ISEIM 2001) / 2001 Asian Conf. on Electrical Insulation Diagnosis (ACEID 2001) / 33rd Symp. on Electrical and Electronic Insulating Materials and Applications in Systems, Himeji, Japan.4 p.

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abstract = "The conduction mechanism of a-SiOxNy:H and a-SiNz:H is studied by measuring the conduction current and the capacitance-voltage characteristics. The low-field conduction is attributable to the Ohmic process and the high-field conduction is attributable to the Poole-Frenkel (PF) emission for both materials. From the similarity on many aspects of conduction process between the two materials, it is considered that the carriers are transported via the same sites associated with Si-N bonds located in the forbidden band in both materials.",

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