抄録
The conduction mechanism of a-SiOxNy:H and a-SiNz:H is studied by measuring the conduction current and the capacitance-voltage characteristics. The low-field conduction is attributable to the Ohmic process and the high-field conduction is attributable to the Poole-Frenkel (PF) emission for both materials. From the similarity on many aspects of conduction process between the two materials, it is considered that the carriers are transported via the same sites associated with Si-N bonds located in the forbidden band in both materials.
本文言語 | English |
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ページ | 148-151 |
ページ数 | 4 |
出版ステータス | Published - 2001 12月 1 |
イベント | Proceedings of 2001 International Symp. on Electrical Insulating Materials (ISEIM 2001) / 2001 Asian Conf. on Electrical Insulation Diagnosis (ACEID 2001) / 33rd Symp. on Electrical and Electronic Insulating Materials and Applications in Systems - Himeji, Japan 継続期間: 2001 11月 19 → 2001 11月 22 |
Conference
Conference | Proceedings of 2001 International Symp. on Electrical Insulating Materials (ISEIM 2001) / 2001 Asian Conf. on Electrical Insulation Diagnosis (ACEID 2001) / 33rd Symp. on Electrical and Electronic Insulating Materials and Applications in Systems |
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国/地域 | Japan |
City | Himeji |
Period | 01/11/19 → 01/11/22 |
ASJC Scopus subject areas
- 工学(全般)
- 材料科学(全般)