Electrical properties in silicon oxynitride and silicon nitride prepared by plasma-enhanced chemical vapor deposition

Hidefumi Sato*, Hiromitsu Kato, Yoshimichi Ohki, Kwang Soo Seol, Takashi Noma

*この研究の対応する著者

研究成果: Paper査読

7 被引用数 (Scopus)

抄録

The conduction mechanism of a-SiOxNy:H and a-SiNz:H is studied by measuring the conduction current and the capacitance-voltage characteristics. The low-field conduction is attributable to the Ohmic process and the high-field conduction is attributable to the Poole-Frenkel (PF) emission for both materials. From the similarity on many aspects of conduction process between the two materials, it is considered that the carriers are transported via the same sites associated with Si-N bonds located in the forbidden band in both materials.

Conference

ConferenceProceedings of 2001 International Symp. on Electrical Insulating Materials (ISEIM 2001) / 2001 Asian Conf. on Electrical Insulation Diagnosis (ACEID 2001) / 33rd Symp. on Electrical and Electronic Insulating Materials and Applications in Systems
国/地域Japan
CityHimeji
Period01/11/1901/11/22

ASJC Scopus subject areas

  • 工学(全般)
  • 材料科学(全般)

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