Electrical properties of diamond MISFETs with submicron-sized gate on boron-doped (111) surface

Takeyasu Saito; Kyung Ho Park; Kazuyuki Hirama; Hitoshi Umezawa; Mitsuya Satoh; Hiroshi Kawarada; Zhi Quan Liu; Kazutaka Mitsuishi; Hideyo Okushi

Electrical properties of diamond MISFETs with submicron-sized gate on boron-doped (111) surface

Takeyasu Saito^*, Kyung Ho Park, Kazuyuki Hirama, Hitoshi Umezawa, Mitsuya Satoh, Hiroshi Kawarada, Zhi Quan Liu, Kazutaka Mitsuishi, Hideyo Okushi

^*この研究の対応する著者

基幹理工学部

研究成果: Conference contribution

抄録

An H-terminated-surface conductive layer of B-doped diamond on a (111) surface was used to fabricate a metal insulator semiconductor field effect transistor (MISFET) using CaF₂, SiO₂ or Al ₂O₃ gate insulators and a Cu-metal stacked gate. For a CaF₂ gate, the maximum measured drain current (I_dmax) was 240 mA/mm and the maximum transconductance (g_m) was 70 mS/mm, and the cut-off frequency of 4 GHz was obtained. For a SiO₂ gate, I _dmax and g_m were 75 mA/mm and 24 mS/mm, respectively, and for an Al₂O₃ gate, these characteristics were 86 mA/mm and 15 mS/mm, respectively. These values are among the highest reported DC and RF characteristics for a diamond homoepitaxial (111) MISFET.

本文言語	English
ホスト出版物のタイトル	Progress in Semiconductor Materials V - Novel Materials and Electronic and Optoelectronic Applications
ページ	485-490
ページ数	6
出版ステータス	Published - 2006 8月 23
イベント	2005 MRS Fall Meeting - Boston, MA, United States 継続期間: 2005 11月 28 → 2005 12月 2

出版物シリーズ

名前	Materials Research Society Symposium Proceedings
巻	891
ISSN（印刷版）	0272-9172

Other

Other	2005 MRS Fall Meeting
国/地域	United States
City	Boston, MA
Period	05/11/28 → 05/12/2

ASJC Scopus subject areas

材料科学（全般）
凝縮系物理学
材料力学
機械工学

他のファイルとリンク

引用スタイル

Saito, T., Park, K. H., Hirama, K., Umezawa, H., Satoh, M., Kawarada, H., Liu, Z. Q., Mitsuishi, K., & Okushi, H. (2006). Electrical properties of diamond MISFETs with submicron-sized gate on boron-doped (111) surface. In Progress in Semiconductor Materials V - Novel Materials and Electronic and Optoelectronic Applications (pp. 485-490). (Materials Research Society Symposium Proceedings; Vol. 891).

Electrical properties of diamond MISFETs with submicron-sized gate on boron-doped (111) surface. / Saito, Takeyasu; Park, Kyung Ho; Hirama, Kazuyuki その他.

Progress in Semiconductor Materials V - Novel Materials and Electronic and Optoelectronic Applications. 2006. p. 485-490 (Materials Research Society Symposium Proceedings; Vol. 891).

研究成果: Conference contribution

Saito, T, Park, KH, Hirama, K, Umezawa, H, Satoh, M, Kawarada, H, Liu, ZQ, Mitsuishi, K & Okushi, H 2006, Electrical properties of diamond MISFETs with submicron-sized gate on boron-doped (111) surface. in Progress in Semiconductor Materials V - Novel Materials and Electronic and Optoelectronic Applications. Materials Research Society Symposium Proceedings, vol. 891, pp. 485-490, 2005 MRS Fall Meeting, Boston, MA, United States, 05/11/28.

@inproceedings{538d3667fa7549148c8ba751b1d7bc59,

title = "Electrical properties of diamond MISFETs with submicron-sized gate on boron-doped (111) surface",

abstract = "An H-terminated-surface conductive layer of B-doped diamond on a (111) surface was used to fabricate a metal insulator semiconductor field effect transistor (MISFET) using CaF2, SiO2 or Al 2O3 gate insulators and a Cu-metal stacked gate. For a CaF2 gate, the maximum measured drain current (Idmax) was 240 mA/mm and the maximum transconductance (gm) was 70 mS/mm, and the cut-off frequency of 4 GHz was obtained. For a SiO2 gate, I dmax and gm were 75 mA/mm and 24 mS/mm, respectively, and for an Al2O3 gate, these characteristics were 86 mA/mm and 15 mS/mm, respectively. These values are among the highest reported DC and RF characteristics for a diamond homoepitaxial (111) MISFET.",

author = "Takeyasu Saito and Park, {Kyung Ho} and Kazuyuki Hirama and Hitoshi Umezawa and Mitsuya Satoh and Hiroshi Kawarada and Liu, {Zhi Quan} and Kazutaka Mitsuishi and Hideyo Okushi",

year = "2006",

month = aug,

day = "23",

language = "English",

isbn = "1558998454",

series = "Materials Research Society Symposium Proceedings",

pages = "485--490",

booktitle = "Progress in Semiconductor Materials V - Novel Materials and Electronic and Optoelectronic Applications",

note = "2005 MRS Fall Meeting ; Conference date: 28-11-2005 Through 02-12-2005",

}

TY - GEN

T1 - Electrical properties of diamond MISFETs with submicron-sized gate on boron-doped (111) surface

AU - Saito, Takeyasu

AU - Park, Kyung Ho

AU - Hirama, Kazuyuki

AU - Umezawa, Hitoshi

AU - Satoh, Mitsuya

AU - Kawarada, Hiroshi

AU - Liu, Zhi Quan

AU - Mitsuishi, Kazutaka

AU - Okushi, Hideyo

PY - 2006/8/23

Y1 - 2006/8/23

N2 - An H-terminated-surface conductive layer of B-doped diamond on a (111) surface was used to fabricate a metal insulator semiconductor field effect transistor (MISFET) using CaF2, SiO2 or Al 2O3 gate insulators and a Cu-metal stacked gate. For a CaF2 gate, the maximum measured drain current (Idmax) was 240 mA/mm and the maximum transconductance (gm) was 70 mS/mm, and the cut-off frequency of 4 GHz was obtained. For a SiO2 gate, I dmax and gm were 75 mA/mm and 24 mS/mm, respectively, and for an Al2O3 gate, these characteristics were 86 mA/mm and 15 mS/mm, respectively. These values are among the highest reported DC and RF characteristics for a diamond homoepitaxial (111) MISFET.

AB - An H-terminated-surface conductive layer of B-doped diamond on a (111) surface was used to fabricate a metal insulator semiconductor field effect transistor (MISFET) using CaF2, SiO2 or Al 2O3 gate insulators and a Cu-metal stacked gate. For a CaF2 gate, the maximum measured drain current (Idmax) was 240 mA/mm and the maximum transconductance (gm) was 70 mS/mm, and the cut-off frequency of 4 GHz was obtained. For a SiO2 gate, I dmax and gm were 75 mA/mm and 24 mS/mm, respectively, and for an Al2O3 gate, these characteristics were 86 mA/mm and 15 mS/mm, respectively. These values are among the highest reported DC and RF characteristics for a diamond homoepitaxial (111) MISFET.

UR - http://www.scopus.com/inward/record.url?scp=33747355490&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33747355490&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:33747355490

SN - 1558998454

SN - 9781558998452

T3 - Materials Research Society Symposium Proceedings

SP - 485

EP - 490

BT - Progress in Semiconductor Materials V - Novel Materials and Electronic and Optoelectronic Applications

T2 - 2005 MRS Fall Meeting

Y2 - 28 November 2005 through 2 December 2005

ER -

Electrical properties of diamond MISFETs with submicron-sized gate on boron-doped (111) surface

抄録

出版物シリーズ

Other

ASJC Scopus subject areas

他のファイルとリンク

フィンガープリント

引用スタイル