Electrical properties of graphite/p-type homoepitaxial diamond contact

Y. G. Chen, M. Hasegawa, S. Yamanaka, H. Okushi, Naoto Kobayashi

研究成果: Article

1 引用 (Scopus)

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We have studied the electrical properties of the graphitic electrodes formed in boron-doped homoepitaxial diamond films in order to make reliable ohmic contacts in diamond-based electronic devices. Boron-doped homoepitaxial diamond films were synthesized by gas-phase doping of boron during the chemical vapor deposition growth. The graphitization of diamond by Ar ion implantation was utilized for the graphitic electrodes. The electrical properties of graphite/diamond contacts were investigated by using the current-voltage measurement. The specific contact resistance was characterized by applying circular transmission line model (CTLM) extrapolation method and determined to be 1.18 Ω· cm2.

元の言語English
ページ(範囲)945-948
ページ数4
ジャーナルMaterials Science Forum
389-393
発行部数2
出版物ステータスPublished - 2002
外部発表Yes

ASJC Scopus subject areas

  • Materials Science(all)

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  • これを引用

    Chen, Y. G., Hasegawa, M., Yamanaka, S., Okushi, H., & Kobayashi, N. (2002). Electrical properties of graphite/p-type homoepitaxial diamond contact. Materials Science Forum, 389-393(2), 945-948.