抜粋
We have studied the electrical properties of the graphitic electrodes formed in boron-doped homoepitaxial diamond films in order to make reliable ohmic contacts in diamond-based electronic devices. Boron-doped homoepitaxial diamond films were synthesized by gas-phase doping of boron during the chemical vapor deposition growth. The graphitization of diamond by Ar ion implantation was utilized for the graphitic electrodes. The electrical properties of graphite/diamond contacts were investigated by using the current-voltage measurement. The specific contact resistance was characterized by applying circular transmission line model (CTLM) extrapolation method and determined to be 1.18 Ω· cm2.
| 元の言語 | English |
|---|---|
| ページ（範囲） | 945-948 |
| ページ数 | 4 |
| ジャーナル | Materials Science Forum |
| 巻 | 389-393 |
| 発行部数 | 2 |
| 出版物ステータス | Published - 2002 |
| 外部発表 | Yes |
ASJC Scopus subject areas
- Materials Science(all)
フィンガープリント Electrical properties of graphite/p-type homoepitaxial diamond contact' の研究トピックを掘り下げます。これらはともに一意のフィンガープリントを構成します。
これを引用
Chen, Y. G., Hasegawa, M., Yamanaka, S., Okushi, H., & Kobayashi, N. (2002). Electrical properties of graphite/p-type homoepitaxial diamond contact. Materials Science Forum, 389-393(2), 945-948.