Electrical properties of graphite/p-type homoepitaxial diamond contact

Y. G. Chen; M. Hasegawa; S. Yamanaka; H. Okushi; Naoto Kobayashi

Electrical properties of graphite/p-type homoepitaxial diamond contact

Y. G. Chen, M. Hasegawa, S. Yamanaka, H. Okushi, Naoto Kobayashi

研究成果: Article › 査読

抄録

We have studied the electrical properties of the graphitic electrodes formed in boron-doped homoepitaxial diamond films in order to make reliable ohmic contacts in diamond-based electronic devices. Boron-doped homoepitaxial diamond films were synthesized by gas-phase doping of boron during the chemical vapor deposition growth. The graphitization of diamond by Ar ion implantation was utilized for the graphitic electrodes. The electrical properties of graphite/diamond contacts were investigated by using the current-voltage measurement. The specific contact resistance was characterized by applying circular transmission line model (CTLM) extrapolation method and determined to be 1.18 Ω· cm².

本文言語	English
ページ（範囲）	945-948
ページ数	4
ジャーナル	Materials Science Forum
巻	389-393
号	2
出版ステータス	Published - 2002
外部発表	はい

ASJC Scopus subject areas

Materials Science(all)

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引用スタイル

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T1 - Electrical properties of graphite/p-type homoepitaxial diamond contact

AU - Chen, Y. G.

AU - Hasegawa, M.

AU - Yamanaka, S.

AU - Okushi, H.

AU - Kobayashi, Naoto

PY - 2002

Y1 - 2002

N2 - We have studied the electrical properties of the graphitic electrodes formed in boron-doped homoepitaxial diamond films in order to make reliable ohmic contacts in diamond-based electronic devices. Boron-doped homoepitaxial diamond films were synthesized by gas-phase doping of boron during the chemical vapor deposition growth. The graphitization of diamond by Ar ion implantation was utilized for the graphitic electrodes. The electrical properties of graphite/diamond contacts were investigated by using the current-voltage measurement. The specific contact resistance was characterized by applying circular transmission line model (CTLM) extrapolation method and determined to be 1.18 Ω· cm2.

AB - We have studied the electrical properties of the graphitic electrodes formed in boron-doped homoepitaxial diamond films in order to make reliable ohmic contacts in diamond-based electronic devices. Boron-doped homoepitaxial diamond films were synthesized by gas-phase doping of boron during the chemical vapor deposition growth. The graphitization of diamond by Ar ion implantation was utilized for the graphitic electrodes. The electrical properties of graphite/diamond contacts were investigated by using the current-voltage measurement. The specific contact resistance was characterized by applying circular transmission line model (CTLM) extrapolation method and determined to be 1.18 Ω· cm2.

KW - Diamond Applications

KW - Diamond Properties

KW - Ohmic Contacts

KW - Specific Contact Resistance

KW - Transmission Line Model

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