抄録
We have studied the electrical properties of the graphitic electrodes formed in boron-doped homoepitaxial diamond films in order to make reliable ohmic contacts in diamond-based electronic devices. Boron-doped homoepitaxial diamond films were synthesized by gas-phase doping of boron during the chemical vapor deposition growth. The graphitization of diamond by Ar ion implantation was utilized for the graphitic electrodes. The electrical properties of graphite/diamond contacts were investigated by using the current-voltage measurement. The specific contact resistance was characterized by applying circular transmission line model (CTLM) extrapolation method and determined to be 1.18 Ω· cm2.
本文言語 | English |
---|---|
ページ(範囲) | 945-948 |
ページ数 | 4 |
ジャーナル | Materials Science Forum |
巻 | 389-393 |
号 | 2 |
出版ステータス | Published - 2002 |
外部発表 | はい |
ASJC Scopus subject areas
- Materials Science(all)