In this study, electron traps in dilute GaAsN are investigated using the temperature dependence of electron concentration (n) and mobility (μe) for annealed heavily Si-doped GaAsN. The temperature dependence of n and μe depends on the annealing temperature, indicating that electrons are excited to the conduction band only from deep electron traps for heavily Si-doped GaAsN annealed at 580 °C. However, they are excited to the conduction band from both the deep electron traps and the shallow Si donor level for heavily Si-doped GaAsN annealed at 550 °C. The depth of the deep electron traps from the bottom of the conduction band for heavily Si-doped GaAsN annealed at 550 °C is almost equal to heavily Si-doped GaAsN annealed at 580 °C. The results demonstrate that these deep electron traps are inherent in dilute GaAsN because similar deep electron traps are also observed for the as-grown Si-doped GaAsN.
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