Electrical resistivity and microstructures of sputtered CuxMo6S8 films

B. R. Zhao; R. Ohtaki; H. L. Luo; L. D. Flesner

doi:10.1016/0040-6090(83)90236-5

Electrical resistivity and microstructures of sputtered Cu_xMo₆S₈ films

B. R. Zhao, R. Ohtaki, H. L. Luo, L. D. Flesner

研究成果: Article › 査読

11 被引用数 (Scopus)

抄録

The resistivity of superconducting Cu_xMo₆S₈ films prepared by sputtering was measured between 10 and 300 K. Using a scanning electron microscope, the microstructures of the films with different preparation conditions were examined. The broadly varying values of the measured resistivities were explained on the basis of the particular microstructures of the films.

本文言語	English
ページ（範囲）	185-192
ページ数	8
ジャーナル	Thin Solid Films
巻	110
号	3
DOI	https://doi.org/10.1016/0040-6090(83)90236-5
出版ステータス	Published - 1983 12 16
外部発表	はい

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

文献へのアクセス

10.1016/0040-6090(83)90236-5

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引用スタイル

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author = "Zhao, {B. R.} and R. Ohtaki and Luo, {H. L.} and Flesner, {L. D.}",

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