Electrical spin injection from ferromagnetic MnAs metal layers into GaAs

M. Ramsteiner*, H. Y. Hao, A. Kawaharazuka, H. J. Zhu, M. Kästner, R. Hey, L. Däweritz, H. T. Grahn, K. H. Ploog

*この研究の対応する著者

研究成果: Article査読

184 被引用数 (Scopus)

抄録

The spin injection into GaAs has been studied for the ferromagnetic metal MnAs. Evidence for preferential minority-spin injection is obtained from the circular polarization of the electroluminescence in GaAs/(In,Ga)As light-emitting diodes (LED). The spin-injection efficiency of 6% at the MnAs/GaAs interface is estimated on the basis of spin-relaxation times extracted from time-resolved photoluminescence measurements. This efficiency, as well as the preferential spin orientation, resembles very much the injection behavior found for epitaxial Fe layers. The results do not depend on the azimuthal orientation of the epitaxial MnAs injection layer.

本文言語English
論文番号081304
ページ(範囲)813041-813044
ページ数4
ジャーナルPhysical Review B - Condensed Matter and Materials Physics
66
8
出版ステータスPublished - 2002 8 15

ASJC Scopus subject areas

  • 凝縮系物理学

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