Electrically driven photonic-crystal lasers on silicon substrates using direct wafer bonding

Koji Takeda; Tomonari Sato; Takuro Fujii; Eiichi Kuramochi; Masaya Notomi; Koichi Hasebe; Takaaki Kakitsuka; Shinji Matsuo

Electrically driven photonic-crystal lasers on silicon substrates using direct wafer bonding

Koji Takeda, Tomonari Sato, Takuro Fujii, Eiichi Kuramochi, Masaya Notomi, Koichi Hasebe, Takaaki Kakitsuka, Shinji Matsuo

研究成果: Paper › 査読

抄録

We demonstrate the first continuous wave operation of electrically driven photoniccrystal lasers on Si at room temperature. Plasma assisted bonding integrated III-V semiconductor devices on Si. The device exhibited a 33 μA threshold current.

本文言語	English
出版ステータス	Published - 2014 1月 1
外部発表	はい
イベント	2014 Conference on Lasers and Electro-Optics, CLEO 2014 - San Jose, United States 継続期間: 2014 6月 8 → 2014 6月 13

Other

Other	2014 Conference on Lasers and Electro-Optics, CLEO 2014
国/地域	United States
City	San Jose
Period	14/6/8 → 14/6/13

ASJC Scopus subject areas

電子工学および電気工学
原子分子物理学および光学
電子材料、光学材料、および磁性材料

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引用スタイル

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title = "Electrically driven photonic-crystal lasers on silicon substrates using direct wafer bonding",

abstract = "We demonstrate the first continuous wave operation of electrically driven photoniccrystal lasers on Si at room temperature. Plasma assisted bonding integrated III-V semiconductor devices on Si. The device exhibited a 33 μA threshold current.",

author = "Koji Takeda and Tomonari Sato and Takuro Fujii and Eiichi Kuramochi and Masaya Notomi and Koichi Hasebe and Takaaki Kakitsuka and Shinji Matsuo",

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note = "2014 Conference on Lasers and Electro-Optics, CLEO 2014 ; Conference date: 08-06-2014 Through 13-06-2014",

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TY - CONF

T1 - Electrically driven photonic-crystal lasers on silicon substrates using direct wafer bonding

AU - Takeda, Koji

AU - Sato, Tomonari

AU - Fujii, Takuro

AU - Kuramochi, Eiichi

AU - Notomi, Masaya

AU - Hasebe, Koichi

AU - Kakitsuka, Takaaki

AU - Matsuo, Shinji

PY - 2014/1/1

Y1 - 2014/1/1

N2 - We demonstrate the first continuous wave operation of electrically driven photoniccrystal lasers on Si at room temperature. Plasma assisted bonding integrated III-V semiconductor devices on Si. The device exhibited a 33 μA threshold current.

AB - We demonstrate the first continuous wave operation of electrically driven photoniccrystal lasers on Si at room temperature. Plasma assisted bonding integrated III-V semiconductor devices on Si. The device exhibited a 33 μA threshold current.

UR - http://www.scopus.com/inward/record.url?scp=84944706538&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84944706538&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:84944706538

T2 - 2014 Conference on Lasers and Electro-Optics, CLEO 2014

Y2 - 8 June 2014 through 13 June 2014

ER -

Electrically driven photonic-crystal lasers on silicon substrates using direct wafer bonding

抄録

Other

ASJC Scopus subject areas

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