Electrochemical evaluation and finite element structure analysis of Si wafer surface under mechanical stress

K. Sakata, T. Homma

研究成果: Conference contribution

抜粋

The effect of mechanical strain on the surface properties of Si wafer was investigated as a model experiment to evaluate the correlation between the degree of the strain and the electrochemical properties of the Si wafer surface. Finite element structure analysis was applied to estimate the degree of strain, and the open circuit potential measurement was carried out to investigate the surface electrochemical property. The results of these experiments suggested that the mechanical stress induces strain to the Si crystal structure to change the surface reactivity.

元の言語English
ホスト出版物のタイトルECS Transactions - Solid State - General - 214th ECS Meeting/RRiME 2008
ページ79-86
ページ数8
エディション40
DOI
出版物ステータスPublished - 2009 11 23
イベントSolid State - General - 214th ECS Meeting/RRiME 2008 - Honolulu, HI, United States
継続期間: 2008 10 122008 10 17

出版物シリーズ

名前ECS Transactions
番号40
16
ISSN(印刷物)1938-5862
ISSN(電子版)1938-6737

Conference

ConferenceSolid State - General - 214th ECS Meeting/RRiME 2008
United States
Honolulu, HI
期間08/10/1208/10/17

ASJC Scopus subject areas

  • Engineering(all)

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  • これを引用

    Sakata, K., & Homma, T. (2009). Electrochemical evaluation and finite element structure analysis of Si wafer surface under mechanical stress. : ECS Transactions - Solid State - General - 214th ECS Meeting/RRiME 2008 (40 版, pp. 79-86). (ECS Transactions; 巻数 16, 番号 40). https://doi.org/10.1149/1.3108356