Electrochemical potential measurement and finite element structure analysis of Si wafer surface under mechanical stress

Kaoruho Sakata, Takayuki Homma

研究成果: Article

1 引用 (Scopus)

抜粋

Mechanical stress was applied to a Si single crystal wafer to evaluate the changes in its surface properties arising from the lattice strain induced by mechanical stress. The stress was applied quantitatively to the wafer in order to investigate the correlation between the degree of strain and the electrochemical properties of its surface. Finite element method (FEM) structural analysis was used to estimate the degree of strain on the surface, and the open circuit potential was measured in order to investigate the surface electrochemical properties. The analysis suggested that the surface of the wafer was under tensile strain, and the open circuit potential shifted toward the negative direction with the strain. This indicates that mechanical stress applied to a Si surface can change its electronic properties by changing the surface crystal structure.

元の言語English
ページ(範囲)144-146
ページ数3
ジャーナルElectrochemistry Communications
25
発行部数1
DOI
出版物ステータスPublished - 2012 11 1

ASJC Scopus subject areas

  • Electrochemistry

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