抄録
In this study, γ- and δ-MnO2 thin films were deposited onto F-doped tin oxide glass substrates via a chemical bath deposition technique in which manganese (II) ions were oxidized by bromate ion in a homogeneous solution. The addition of cetyltrimethylammonium chlorate to the starting solutions resulted in the deposition of the δ-phase. The thin films showed rectangular cyclic voltammograms even at higher scan rates. The δ-phase films showed better specific capacitance than the γ-phase films. A 200-nm-thick δ-MnO2 film showed an excellent specific capacitance of 750 F/g at a scan rate of 10 mV/s.
本文言語 | English |
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ページ(範囲) | 8001-8005 |
ページ数 | 5 |
ジャーナル | Journal of Materials Science: Materials in Electronics |
巻 | 27 |
号 | 8 |
DOI | |
出版ステータス | Published - 2016 8月 1 |
外部発表 | はい |
ASJC Scopus subject areas
- 電子材料、光学材料、および磁性材料
- 原子分子物理学および光学
- 凝縮系物理学
- 電子工学および電気工学