Electrodeposition of a Copper-Tellurium Compound under Diffusion-Limiting Control

Takahiro Ishizaki*, Daisuke Yata, Akio Fuwa


    研究成果: Article査読

    15 被引用数 (Scopus)


    Copper-tellurium films were electrochemically deposited from a solution containing CuCl2, TeO2 and HCl. This study revealed the relationship between the copper/tellurium ratio in the solution and the metal ratio in the deposited film. The Cu/Te ratio of the deposited film was successfully controlled by conducting electrodeposition under diffusion-limited conditions. The [Cu]/[Te] ratio in the solution was linearly related to that of Cu/Te in the deposited film, since the partial current density originating from the copper and tellurium ions was directly proportional to the concentration of each. The deposited films crystallized to Cu2Te at the Cu/Te ratio of 2.5. The films were deposited at -0.4 V vs. Ag/AgCl from a solution in which [Cu]/[Te] = 2.5, [CuCl2] = 1.0 × 10-3 M (= kmol m-3), [TeO2] = 4.0 × 10-4 M, and pH = 1.

    ジャーナルMaterials Transactions
    出版ステータスPublished - 2003 8月

    ASJC Scopus subject areas

    • 材料科学(全般)
    • 金属および合金


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